Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination

Abstract

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an Al x In 1−x Sb mixed crystal layer formed on a substrate, and an InAs x Sb 1−x (0<x≦1) thin film conducting layer directly formed on the Al x In 1−x Sb layer, in which the Al x In 1−x Sb mixed crystal layer is a layer that exhibits higher resistance than the InAs x Sb 1−x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAs x Sb 1−x thin film conducting layer, and the a lattice mismatch is +1.3% to −0.8%.

The invention claimed is: 
     
       1. A thin film lamination having mixed crystal layer and thin film conducting layer comprising:
 an Al x In 1−x Sb mixed crystal layer (0.08≦x≦1) formed on a substrate; and 
 an InAs x Sb 1−x (0<x≦1) thin film conducting layer formed directly on the Al x In 1−x Sb mixed crystal layer, wherein 
 the Al x In 1−x Sb mixed crystal layer is a layer that exhibits higher resistance than the InAs x Sb 1−x  thin film conducting layer or that exhibits insulation or p-type conductivity, and by having a band gap greater than the InAs x Sb 1−x thin film conducting layer and by having a lattice mismatch of +1.3% to −0.8%. 
 
     
     
       2. The thin film lamination according to  claim 1 , wherein the Al x In 1−x Sb mixed crystal layer having percentage (x) of content of Al atoms of 8% to 30% (0.08≦x≦0.3). 
     
     
       3. The thin film lamination according to  claim 1 , wherein the InAs x Sb 1−x thin film conducting layer is doped with at least one of Te, S, Se, Sn, Si and Ge, which belong to VI group atoms or IV group atoms as donor impurities. 
     
     
       4. The thin film lamination according to  claim 1 , wherein the full width at half maximum of X-ray diffraction of the Al x In 1−x Sb mixed crystal layer or of the Al x  Ga y In 1−x−y Sb mixed crystal layer is 50 seconds to 1,000 seconds. 
     
     
       5. The thin film lamination according to  claim 1 , wherein a lattice mismatch between the Al x In 1−x Sb mixed crystal layer or the Al x Ga y In 1−x−y Sb mixed crystal layer and the InAs x Sb 1−x thin film conducting layer is +1.3% to −0.8%. 
     
     
       6. The thin film lamination according to  claim 1 , wherein a lattice mismatch between the Al x In 1−x Sb mixed crystal layer or the Al x Ga y In 1−x−y Sb mixed crystal layer and the InAs x Sb 1−x  thin film conducting layer is ±0.2% or less. 
     
     
       7. The thin film lamination according to  claim 1 , wherein the InAs x Sb 1−x (0 <x≦1) thin film conducting layer having a film thickness of 100 nm or less and 10 nm or more and electron mobility of 30,000 cm 2 /Vs or more. 
     
     
       8. The thin film lamination according to  claim 1 , comprising:
 the substrate is a GaAs substrate; 
 the Al x In 1−x Sb mixed crystal layer is an Al 0.1 In 0.9 Sb mixed crystal layer; and 
 the InAs x Sb 1−x  thin film conducting layer is an InAs 0.09 Sb 0.91  thin film conducting layer. 
 
     
     
       9. The thin film lamination according to  claim 1 , comprising:
 an Al x In 1−x Sb mixed crystal layer (0.08≦x≦1) or an Al x Ga y In 1−x−y Sb mixed crystal layer (0<x+y≦1,x≠0) directly formed on the InAs x Sb 1−x (0<x≦1) thin film conducting layer as a cap layer, wherein 
 the Al x In 1−x Sb mixed crystal layer cap layer or the Al x Ga y ln 1−x−y Sb mixed crystal layer cap layer is a layer that exhibits higher resistance than the InAs x Sb 1−x  thin film conducting layer or that exhibits insulation or p-type conductivity, and by having a band gap greater than the InAs x Sb 1−x  thin film conducting layer, and by having a lattice mismatch of +1.3% to −0.8% with the InAs x Sb 1−x  thin film conducting layer. 
 
     
     
       10. The thin film lamination according to  claim 9 , comprising:
 the substrate is a GaAs substrate; 
 the Al x In 1−x Sb mixed crystal layer is an Al 0.1 In 0.9 Sb mixed crystal layer; 
 the InAs x Sb 1−x  thin film conducting layer is an InAs 0.09 Sb 0.91  thin film conducting layer; and 
 the Al x In 1−x Sb mixed crystal layer of the cap layer is an A 1   0.1 In 0.9 Sb mixed crystal layer, wherein 
 further comprising a GaAs protective film on the cap layer of the Al 0.1 In 0.9 Sb mixed crystal layer as a cap layer. 
 
     
     
       11. The thin film lamination according to  claim 1 , comprising:
 a GaAs insulating layer is formed on the substrate; 
 the AlInSb mixed crystal layer is formed thereon; 
 the InAsSb conducting layer is formed next; 
 an AlInSb layer is further foimed on the InAsSb conducting layer as a cap layer; and 
 an insulating thin GaAs cap layer is further formed on the AlInSb cap layer. 
 
     
     
       12. A thin film magnetic sensor characterized by employing the InAs x Sb 1−x  thin film conducting layer of the thin film lamination according to  claim 1  as an operating layer. 
     
     
       13. The thin film magnetic sensor according to  claim 12 , wherein the thin film magnetic sensor and a Si integrated circuit chip for amplifying a sensor signal of the thin film magnetic sensor are electrically connected, and are put into a single package. 
     
     
       14. A thin film magnetic sensor characterized by employing the InAs x Sb 1−x  thin film conducting layer of the thin film lamination according to  claim 3  as an operating layer. 
     
     
       15. The thin film magnetic sensor according to  claim 14 , wherein the thin film magnetic sensor and a Si integrated circuit chip for amplifying a sensor signal of the thin film magnetic sensor are electrically connected, and are put into a single package. 
     
     
       16. A thin film magnetic sensor characterized by employing the thin film conducting layer in the thin film lamination according to  claim 1  as an operating layer of an element utilizing Hall effect or of an element utilizing magnetic resistance effect. 
     
     
       17. The thin film magnetic sensor according to  claim 16 , wherein the thin film magnetic sensor and a Si integrated circuit chip for amplifying a sensor signal of the thin film magnetic sensor are electrically connected, and are put into a single package. 
     
     
       18. A thin film magnetic sensor characterized by employing the thin film conducting layer in the thin film lamination according to  claim 3  as an operating layer of an element utilizing Hall effect or of an element utilizing magnetic resistance effect. 
     
     
       19. The thin film magnetic sensor according to  claim 18 , wherein the thin film magnetic sensor and a Si integrated circuit chip for amplifying a sensor signal of the thin film magnetic sensor are electrically connected, and are put into a single package.