Light-emitting device and method for manufacturing same

Abstract

The light-emitting device of the present invention is a light-emitting device having a plurality of pixels that comprises a light-emitting function layer of at least one layer that emits light in accordance with a supplied current, a first electrode layer of a conductive material provided at one surface of the light-emitting function layer, and being transparent to at least part of a wavelength range of light emitted from the light-emitting function layer, a second electrode layer provided facing the first electrode layer on the other surface of the light-emitting function layer, including conductive material, and being transparent to at least part of the wavelength range of light emitted from the light-emitting function layer, and a reflecting layer provided on the second electrode layer, and being reflective to at least part of the wavelength range of light emitted from the light-emitting function layer.

1. A light-emitting device having a plurality of pixels, each of the plurality of pixels including a light-emitting element which displays color by emitting light at a wavelength corresponding to one of a plurality of different colors;
 wherein each light-emitting element comprises:
 a light emitting function layer of at least one layer, which emits light in accordance with a supplied current; 
 a first electrode layer which comprises conductive material, is provided at a first surface of the light-emitting function layer, and is transparent to at least part of a wavelength range of the light emitted from the light-emitting function layer; 
 a second electrode layer which comprises conductive material, is provided at a second surface of the light-emitting function layer so as to face the first electrode layer with the light-emitting function layer therebetween, and is transparent to at least part of the wavelength region of the light emitted from the light-emitting function layer; and 
 a reflecting layer which is provided on the second electrode layer with no layer interposed between the reflecting layer and the second electrode layer, and which is reflective to at least part of the wavelength range of the light emitted from the light-emitting function layer; 
 
 wherein the second electrode layer is provided in common to all of the plurality of pixels and comprises a plurality of conducting layers which are stacked; 
 wherein the second electrode layer is 800 to 1500 nm thick and has a same film thickness at each of the plurality of pixels; and 
 wherein the reflecting layer comprises one of Ag, Al, and AlNdTi. 
 
     
     
       2. The light-emitting device according to  claim 1 , wherein the second electrode layer comprises an oxide conduction film comprising one of indium tin oxide, indium zinc oxide, indium tungsten oxide, and indium tungsten zinc oxide. 
     
     
       3. The light-emitting device according to  claim 1 , wherein the second electrode layer is 1000 to 1500 nm thick. 
     
     
       4. The light-emitting device according to  claim 1 , further comprising an electron carrier layer provided between the light-emitting function layer of each light-emitting element and the second electrode layer;
 wherein the second electrode layer is formed by sputtering; and 
 wherein the electron carrier layer comprises a material having resistance to oxygen used in the sputtering when forming the second electrode layer. 
 
     
     
       5. The light-emitting device according to  claim 1 , wherein Ca is used in the electron carrier layer. 
     
     
       6. The light-emitting device according to  claim 4 , further comprising a plurality of partition walls defining respective forming regions for the plurality of pixels;
 wherein the electron carrier layer, the second electrode layer, and the reflecting layer are provided so as to cover the forming region for each pixel and each partition wall.