Sputtering target

Abstract

Provided is a sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction is 0.4 or less, and even 0.2 or less in a Ta or Ta alloy target. Further provided is a sputtering target in which the ratio of X-ray intensity of (110) on a Ta or Ta alloy target surface measured with X-ray diffraction is 0.8 or less, and the ratio of the foregoing X-ray intensity at a depth of 100 μm or deeper is 0.4 or less. This Ta or Ta alloy target is capable of minimizing the fluctuation of the deposition speed for each target throughout the target life of a sputtering target, and thereby improving and stabilizing the production efficiency of semiconductors during the sputtering process, and contributing to the reduction of production costs.

1. A sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction in relation to the sum of the respective X-ray intensities of (110), (200), (211), (310), (222), (321) is 0.2 or less in a Ta or Ta alloy target having a microstructure obtained by melting and casting a raw material and subjecting the result to deformation processing and heat treatment. 
     
     
       2. A sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction in relation to the sum of the respective X-ray intensities of (110), (200), (211), (310), (222), (321) is 0.8 or less on a target surface of a Ta or Ta alloy having a microstructure obtained by melting and casting a raw material and subjecting the result to deformation processing and heat treatment, and the ratio of said X-ray intensity at a depth of 100 μm or deeper is 0.4 or less. 
     
     
       3. A sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction in relation to the sum of the respective X-ray intensities of (110), (200), (211), (310), (222), (321) is 0.8 or less on a target surface of a Ta or Ta alloy having a microstructure obtained by melting and casting a raw material and subjecting the result to deformation processing and heat treatment, and the ratio of said X-ray intensity at a depth of 50 μm or deeper is 0.4 or less. 
     
     
       4. A sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction in relation to the sum of the respective X-ray intensities of (110), (200), (211), (310), (222), (321) is 0.8 or less on a Ta or Ta alloy having a microstructure obtained by melting and casting a raw material and subjecting the result to deformation processing and heat treatment, and the ratio of said X-ray intensity at a depth of 25 μm or deeper is 0.4 or less. 
     
     
       5. A sputtering target according to  claim 4 , wherein the ratio of said X-ray intensity at the depth of 25 μm or deeper is 0.2 or less. 
     
     
       6. A sputtering target according to  claim 4 , wherein the Ta or Ta alloy consists of Ta. 
     
     
       7. A sputtering target according to  claim 4 , wherein the Ta or Ta alloy is a Ta alloy selected from the group consisting of a Ta—Mo alloy, a Ta—W alloy, a Ta—Hf alloy, and a Ta—Ti alloy. 
     
     
       8. A sputtering target according to  claim 3 , wherein the ratio of said X-ray intensity at the depth of 50 μm or deeper is 0.2 or less. 
     
     
       9. A sputtering target according to  claim 3 , wherein the Ta or Ta alloy consists of Ta. 
     
     
       10. A sputtering target according to  claim 3 , wherein the Ta or Ta alloy is a Ta alloy selected from the group consisting of a Ta—Mo alloy, a Ta—W alloy, a Ta—Hf alloy, and a Ta—Ti alloy. 
     
     
       11. A sputtering target according to  claim 2 , wherein the ratio of said X-ray intensity at the depth of 100 μm or deeper is 0.2 or less. 
     
     
       12. A sputtering target according to  claim 2 , wherein the Ta or Ta alloy consists of Ta. 
     
     
       13. A sputtering target according to  claim 2 , wherein the Ta or Ta alloy is a Ta alloy selected from the group consisting of a Ta—Mo alloy, a Ta—W alloy, a Ta—Hf alloy, and a Ta—Ti alloy. 
     
     
       14. A sputtering target according to  claim 1 , wherein the Ta or Ta alloy target consists of a Ta target. 
     
     
       15. A sputtering target according to  claim 1 , wherein the Ta or Ta alloy target is a Ta alloy target selected from the group consisting of a Ta—Mo alloy, a Ta—W alloy, a Ta—Hf alloy, and a Ta—Ti alloy.