Method for manufacturing memory device

Abstract

Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.

1. A method for manufacturing a memory device comprising the steps of:
 forming a conductive film over an insulating surface; 
 forming a mask over the conductive film; 
 patterning the conductive film with the use of the mask to form a first conductive layer and a second conductive layer; and 
 forming a mixed film between a side surface of the first conductive layer and a side surface of the second conductive layer facing the side surface of the first conductive layer, 
 wherein the mixed film is a film including an inorganic compound, an organic compound, and a halogen atom, and 
 wherein the halogen atom is added to the mixed film by ion implantation. 
 
     
     
       2. The method for manufacturing a memory device according to  claim 1 ,
 wherein the inorganic compound is molybdenum oxide, and 
 wherein the organic compound is a hole-transporting material. 
 
     
     
       3. The method for manufacturing a memory device according to  claim 2 , wherein the molybdenum oxide is molybdenum trioxide. 
     
     
       4. The method for manufacturing a memory device according to  claim 2 , wherein the hole-transporting material is an aromatic amine compound or an anthracene derivative. 
     
     
       5. The method for manufacturing a memory device according to  claim 1 , wherein the halogen atom is fluorine or chlorine. 
     
     
       6. A method for manufacturing a memory device comprising the steps of:
 forming a wiring over an insulating surface; 
 forming an insulating film having an opening over the wiring; 
 forming a conductive film over the insulating film and in the opening; 
 forming a mask over the conductive film; 
 patterning the conductive film with the use of the mask to form a first conductive layer and a second conductive layer; and 
 forming a mixed film between a side surface of the first conductive layer and a side surface of the second conductive layer facing the side surface of the first conductive layer, 
 wherein one of the first conductive layer and the second conductive layer is electrically connected to the wiring, and 
 wherein the mixed film is a film including an inorganic compound, an organic compound, and a halogen atom. 
 
     
     
       7. The method for manufacturing a memory device according to  claim 6 ,
 wherein the inorganic compound is molybdenum oxide, and 
 wherein the organic compound is a hole-transporting material. 
 
     
     
       8. The method for manufacturing a memory device according to  claim 7 , wherein the molybdenum oxide is molybdenum trioxide. 
     
     
       9. The method for manufacturing a memory device according to  claim 7 , wherein the hole-transporting material is an aromatic amine compound or an anthracene derivative. 
     
     
       10. The method for manufacturing a memory device according to  claim 6 , wherein the halogen atom is fluorine or chlorine. 
     
     
       11. The method for manufacturing a memory device according to  claim 6 , wherein the halogen atom is added to the mixed film by ion implantation. 
     
     
       12. The method for manufacturing a memory device according to  claim 6 , wherein the wiring is a word line. 
     
     
       13. A method for manufacturing a memory device comprising the steps of:
 forming a transistor over an insulating surface; 
 forming an insulating film having an opening over the transistor; 
 forming a conductive film over the insulating film; 
 forming a mask over the conductive film; 
 patterning the conductive film with the use of the mask to form a first conductive layer and a second conductive layer; and 
 forming a mixed film between a side surface of the first conductive layer and a side surface of the second conductive layer facing the side surface of the first conductive layer, 
 wherein one of the first conductive layer and the second conductive layer is electrically connected to a source or a drain of the transistor, and 
 wherein the mixed film is a film including an inorganic compound, an organic compound, and a halogen atom. 
 
     
     
       14. The method for manufacturing a memory device according to  claim 13 ,
 wherein the inorganic compound is molybdenum oxide, and 
 wherein the organic compound is a hole-transporting material. 
 
     
     
       15. The method for manufacturing a memory device according to  claim 14 , wherein the molybdenum oxide is molybdenum trioxide. 
     
     
       16. The method for manufacturing a memory device according to  claim 14 , wherein the hole-transporting material is an aromatic amine compound or an anthracene derivative. 
     
     
       17. The method for manufacturing a memory device according to  claim 13 , wherein the halogen atom is fluorine or chlorine. 
     
     
       18. The method for manufacturing a memory device according to  claim 13 , wherein the halogen atom is added to the mixed film by ion implantation.