Manufacturing method for semiconductor integrated circuit device

Abstract

A Cu-CMP step applied to processes for 130 nm, 90 nm, and 65 nm technical nodes or the like mainly employs slurry to which an anticorrosive agent is added for preventing corrosion of Cu wiring. The inventors of the present application have studied and clearly found that in the Cu-CMP step using the slurry with the anticorrosive agent added thereto, the anticorrosive agent often forms complexes with Cu, which remain as foreign matter on a wafer in large quantity, leading to a reduction in yield, and in reliability of TDDB characteristics of the Cu wiring. In the invention of the present application, a post-CMP cleaning process involves applying wet cleaning to a wafer by supplying a cleaning solution, such as a chemical solution or pure water, to a device surface of the wafer substantially in a vertical direction with respect to the horizontal device surface, while rotating the wafer substantially about its center in the horizontal plane. The rotation speed of the wafer is set low such that the thickness of the cleaning solution over the entire device surface becomes substantially uniform.

1. A manufacturing method for a semiconductor integrated circuit device, comprising:
 (a) forming a wiring trench in a first insulating film over a first main surface of a wafer; 
 (b) forming a metal member layer in the wiring trench and over the first insulating film so as to fill the wiring trench therewith; 
 (c) forming an embedded wiring by removing the metal member layer located outside the wiring trench by a CMP process; 
 (d) after the step (c), applying a wet cleaning process to the first main surface side of the wafer with the embedded wiring formed therein while rotating the wafer about an axis thereof in a plane including the first main surface; and 
 (e) after the step (d), drying the first main surface side of the wafer, 
 wherein the wet cleaning process comprises the steps of
 (d1) a first chemical solution cleaning process performed by a first rotary roll brush; 
 (d2) a second chemical solution cleaning process performed by a second rotary roll brush after the first chemical solution cleaning process; 
 (d3) a third chemical solution cleaning process performed by a rotary pen brush after the second chemical solution cleaning process; 
 (d4) a first rinsing process performed without a brush after the third chemical solution cleaning process; 
 (d5) a second rinsing process performed without a brush between the second chemical solution cleaning process and the third chemical solution cleaning process; and 
 (d6) a third rinsing process performed without a brush between the first chemical solution cleaning process and the second chemical solution cleaning process, 
 wherein a rotation speed of the wafer about the axis thereof is from four times per minute to 16 times per minute in the steps (d1), (d2), (d4), (d5), and (d6), and 
 wherein a rotation speed of the wafer about the axis thereof in the step (d3) is higher than the rotation speed of the wafer in the steps (d1), (d2), (d4), (d5), and (d6).