Method for producing planar transporting resonance heterostructures

Abstract

An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer.

1. An electron transport device, comprising:
 at least one transport layer in which at least one periodic dislocation and/or defect array is produced, 
 wherein said transport layer includes at least one area extended in a first electron travel direction, in which the periodic array has a first period, and at least one second area extended in a second electron travel direction, different from said first electron travel direction, in which the periodic array has a second period, with the second period being different from said first period; 
 a first guiding device that guides electrons in a plane of said transport layer and in said first electron travel direction, said first guiding device including a first pair of pads in contact with said transport layer and means for applying voltages to said first pair of pads; and 
 a second guiding device that guides electrons in a plane of said transport layer and in said second electron travel direction, said second guiding device including a second pair of pads in contact with said transport layer and means for applying voltages to said second pair of pads. 
 
     
     
       2. A diode with negative differential resistance, comprising a device according to  claim 1 . 
     
     
       3. A device for characterizing an electric and/or magnetic field, comprising a device according to  claim 1  and means for detecting a variation in intensity of a current circulating in said transport layer or a voltage generated in said transport layer. 
     
     
       4. A device according to  claim 1 , comprising at least one dislocation array, wherein at least some of dislocations are decorated by electrical charges and/or chemical species. 
     
     
       5. A device according to  claim 1 , comprising at least one array of dislocations arranged in a square, in a rectangle or in a hexagon. 
     
     
       6. A device according to  claim 1 , comprising at least one array of irradiation and/or implantation defects. 
     
     
       7. A device according to  claim 1 , wherein the first guiding device and the second guiding device comprise an insulating layer on which said transport layer is placed. 
     
     
       8. A device according to  claim 1 , further comprising means for applying and/or measuring an electrical and/or magnetic field in said transport layer. 
     
     
       9. A device according to  claim 1 , further comprising at least one second transport layer with a dislocation and/or defect array. 
     
     
       10. A device according to  claim 1 , wherein the transport layer is produced in the superficial layer of a SOI structure. 
     
     
       11. A method for producing an electron transport device, comprising:
 forming at least one periodic dislocation and/or defect array in a transport layer, including bonding two crystalline materials; 
 forming guide means for guiding electrons in the plane of said transport layer; 
 forming at least one area extended in a first electron travel direction, in which the periodic array has a first period, and producing at least one second area extended in a second electron travel direction, different from the first electron travel direction, in which the periodic array has a second period, wherein the second period is different from the first period; and 
 forming electrical contacts on the transport layer, said electrical contacts being arranged to define the first electron travel direction and the second electron travel direction. 
 
     
     
       12. A method according to  claim 11 , wherein the extended areas are produced by etching the transport layer. 
     
     
       13. A method according to  claim 11 , further comprising forming at least one second transport layer, with a dislocation and/or defect array. 
     
     
       14. A method according to  claim 11 , wherein the transport layer is produced in a superficial layer of a SOI structure. 
     
     
       15. A method according to  claim 11 , wherein the array comprises at least one dislocation array, the method further comprising decorating at least some of dislocations with electrical charges and/or chemical species. 
     
     
       16. A method according to  claim 11 , wherein the forming the array comprises irradiation and/or implantation. 
     
     
       17. A method according to  claim 11 , further comprising forming means for electrical contact with said transport layer. 
     
     
       18. A method according to  claim 11 , wherein the forming the guide means comprises forming an insulating layer or a relatively non-conductive layer on which said transport layer is placed. 
     
     
       19. A method according to  claim 11 , wherein the forming the guide means comprises a thinning. 
     
     
       20. An electron transport device, comprising:
 at least one transport layer in which at least one periodic dislocation and/or defect array is produced; 
 an insulating layer that guides electrons in a plane of said transport layer, 
 wherein said transport layer includes at least one area extended in a first electron travel direction, in which the periodic array has a first period, and at least one second area extended in a second electron travel direction, different from said first electron travel direction, in which the periodic array has a second period, with the second period being different from said first period; and 
 electrical contacts disposed on the transport layer, wherein the electrical contacts are arranged to define the first electron travel direction and the second electron travel direction.