Light emitting devices including wavelength converting material

Abstract

Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.

1. A light emitting device comprising:
 a multi-layer stack of material including an n-doped region, a p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein at least a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials; and 
 a wavelength converting material layer disposed according to a pattern on the top emission surface of the multi-layer stack of material, wherein sidewalls of the multi-layer stack of material are substantially devoid of the wavelength converting material. 
 
     
     
       2. The light emitting device of  claim 1 , wherein the wavelength converting material is phosphor. 
     
     
       3. The light emitting device of  claim 1 , wherein greater than 75% of the emitted light emerges from the light emitting device via the top emission surface. 
     
     
       4. The light emitting device of  claim 1 , wherein the pattern comprises a plurality of discrete features. 
     
     
       5. The light emitting device of  claim 1 , wherein the pattern comprises a plurality of stripes. 
     
     
       6. The light emitting device of  claim 1 , wherein greater than 50% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material. 
     
     
       7. The light emitting device of  claim 1 , wherein greater than 75% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material. 
     
     
       8. The light emitting device of  claim 1 , wherein greater than 90% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material. 
     
     
       9. The light emitting device of  claim 1 , wherein the pattern is pre-determined. 
     
     
       10. A light emitting device comprising:
 a multi-layer stack of material including an n-doped region, a p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein at least a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials, wherein a plurality of recesses are formed in the top emission surface; and 
 a wavelength converting material layer disposed in the recesses in the top emission surface, wherein sidewalls of the multi-layer stack of material are substantially devoid of the wavelength converting material. 
 
     
     
       11. The light emitting device of  claim 10 , wherein the recesses are formed according to a pattern. 
     
     
       12. The light emitting device of  claim 10 , wherein the recesses are holes. 
     
     
       13. The light emitting device of  claim 10 , wherein the holes have dimensions of less than 1 micron. 
     
     
       14. The light emitting device of  claim 10 , wherein the wavelength converting material layer is disposed only in the recesses in the top emission surface.