Light emitting device

Abstract

Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resistor integrated on the body and configured to sense a temperature of the light emitting diode, and a plurality of metal layers on the body.

1. A light emitting device comprising:
 a body comprising a cavity; 
 a light emitting diode disposed in the cavity; 
 a resistor disposed between the body and the light emitting diode and configured to sense a temperature of the light emitting diode; 
 a groove formed in a portion of a bottom surface of the cavity and including the resistor therein; and 
 a plurality of metal layers on the body, 
 wherein the lower surface of the light emitting diode is attached to an upper surface of the resistor on the body. 
 
     
     
       2. The light emitting device according to  claim 1 , wherein the body comprises a silicon material. 
     
     
       3. The light emitting device according to  claim 1 , comprising an insulation layer between the surface of the body and the plurality of metal layers. 
     
     
       4. The light emitting device according to  claim 3 , wherein the insulation layer is formed between the body and the resistor. 
     
     
       5. The light emitting device according to  claim 1 , wherein the resistor is formed of a semiconductor thin film resistor or a transition metal. 
     
     
       6. The light emitting device according to  claim 1 , wherein the resistor is a material selected from the group consisting of TaN, NiCr, Fe, Mn, Co, and Ni. 
     
     
       7. The light emitting device according to  claim 1 , comprising a zener diode disposed in the body and diffused on the body. 
     
     
       8. The light emitting device according to  claim 1 , wherein the cavity comprises a transparent resin or a phosphor-added transparent resin. 
     
     
       9. The light emitting device according to  claim 3 , wherein the plurality of metal layers comprises a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer, the first and second metal layers being electrically connected to the light emitting diode, the third and fourth metal layers being electrically connected to the resistor. 
     
     
       10. The light emitting device according to  claim 9 , wherein the third and fourth metal layers are disposed between the first and second metal layers, and a portion of the first to fourth metal layers are disposed on a side surface of the body. 
     
     
       11. A light emitting device comprising:
 a body; 
 a light emitting diode on the body; 
 an insulation layer on the surface of the body; 
 first and second metal layers electrically connected to the light emitting diode and formed on the insulation layer; 
 a resistor disposed to sense of temperature of the light emitting diode and formed on the insulation layer; and 
 third and fourth metal layers electrically connected to the resistor, wherein one of the third and fourth metal layers is electrically connected to the body. 
 
     
     
       12. The light emitting device according to  claim 11 , wherein the resistor is integrated on or under the body. 
     
     
       13. The light emitting device according to  claim 1 , wherein the upper surface of the resistor has a different size from a size of the lower surface of the light emitting diode. 
     
     
       14. The light emitting device according to  claim 1 , wherein at least one of the plurality of metal layers is disposed on a side surface of the body. 
     
     
       15. The light emitting device according to  claim 11 , wherein the resistor is a material selected from the group consisting of TaN, NiCr, Fe, Mn, Co, and Ni.