Power semiconductor module comprising a connection device with internal contact spring connection elements

Abstract

A power semiconductor module comprises at least one power semiconductor component and a connection device which makes contact with the power semiconductor component. The connection device is composed of a layer assembly having at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track, and an insulating layer following in the layer assembly, and a second layer following further in the layer assembly and forming at least one second conductor track, the second layer being remote from the power semiconductor component. The power semiconductor module has at least one internal connection element, wherein the internal connection element is embodied as a contact spring having a first and a second contact section and a resilient section. The first contact section has a common contact area with a first or a second conductor track of the connection device.

1. A power semiconductor module comprising:
 at least one power semiconductor component; 
 a connection device which makes contact with said power semiconductor component, said connection device including a recess and a layer assembly, said layer assembly having:
 at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track; 
 an insulating layer following in the layer assembly; and 
 a second electrically conductive layer following further in the layer assembly and forming at least one second conductor track; 
 wherein said second layer is remote from said power semiconductor component, and has at least one internal connection element, said internal connection element being embodied as a contact spring having a first and a second contact section and a resilient section therebetween, said first contact section having a common contact area with a conductor track of said connection device, said common contact area being located in said recess; and 
 wherein said contact spring exerts pressure on said recess in a direction towards the power semiconductor component. 
 
 
     
     
       2. The power semiconductor module of  claim 1 , wherein said recess is formed by a cutout of said second conductor track and of said insulating layer and said contact area is thus arranged on said first conductor track. 
     
     
       3. The power semiconductor module of  claim 1 , wherein said recess is formed by a depression of said second conductor track and said contact area is arranged on said second conductor track. 
     
     
       4. The power semiconductor module of  claim 1 , wherein the layer thicknesses of said first and second electrically conductive layers are each between from about 10 μm and about 500 μm and the layer thickness of said insulating layer is between about 2 μm and about 100 μm. 
     
     
       5. The power semiconductor module of  claim 1 , wherein said at least one power semiconductor component is arranged on a substrate and the power semiconductor module has a housing, which encloses and covers the substrate with said at least one power semiconductor component and said connection device in said housing. 
     
     
       6. The power semiconductor module of  claim 5 , wherein said internal connection elements are arranged partly in guides of said housing and said second contact sections of said internal connection elements project from said housing and can be connected there to external connection elements. 
     
     
       7. The power semiconductor module of  claim 1 ,
 wherein said power semiconductor component includes at least one connection region; and 
 wherein at least one first conductor track of said connection device is connected to said at least one connection region. 
 
     
     
       8. The power semiconductor module of  claim 7 , wherein said at least one connection region is a cohesive connection. 
     
     
       9. The power semiconductor module of  claim 7 , wherein said at least one connection region is a pressure contact connection.