Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devices

Abstract

An integrated circuit device having a capacitor structure and methods of manufacture are disclosed. The device has a substrate, e.g., silicon wafer, silicon on insulator, epitaxial wafer. The device has a dielectric layer overlying the substrate and a polysilicon layer overlying the dielectric layer. The device has a tungsten silicide layer overlying the polysilicon layer and a first oxide layer overlying the tungsten silicide layer. A nitride layer overlies the oxide layer. A second oxide layer is overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure to form a capacitor dielectric. The device also has an upper capacitor plate formed overlying the second oxide layer.

1. An integrated circuit device having a capacitor structure, comprising:
 a substrate; 
 a dielectric layer overlying the substrate; 
 a first polysilicon layer overlying the dielectric layer; 
 a tungsten silicide layer overlying the first polysilicon layer; 
 a first oxide layer overlying the tungsten silicide layer; 
 a nitride layer overlying the oxide layer; 
 a second oxide layer overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure, the sandwiched oxide on nitride on oxide structure forming a capacitor dielectric material; and 
 an upper capacitor plate formed overlying the second oxide layer. 
 
     
     
       2. The device of  claim 1  wherein the tungsten silicide layer having a granular characteristic. 
     
     
       3. The device of  claim 1  wherein the first oxide is provided using a high temperature oxide process. 
     
     
       4. The device of  claim 3  wherein the high temperature oxide process comprises depositing an oxygen bearing species at a temperature ranging from about 600° C. to about 850° C. 
     
     
       5. The device of  claim 1  wherein the second oxide is provided using a high temperature oxide process. 
     
     
       6. The device of  claim 5  wherein the high temperature oxide process comprises depositing an oxygen bearing species at a temperature ranging from about 600° C. to about 850° C. 
     
     
       7. The device of  claim 1  wherein the capacitor structure is a high voltage capacitor being capable of operating at a voltage greater than about 30 volts. 
     
     
       8. The device of  claim 1  wherein the tungsten silicide layer and the first polysilicon layer provide for one or more gate structures for the integrated device. 
     
     
       9. The device of  claim 1  wherein the capacitor structure is provided for an LCD drive or a controller. 
     
     
       10. The device of  claim 1  wherein the silicon nitride is deposited at a temperature ranging from about 600° C. to about 850° C.