Semiconductor and optoelectronic devices

Abstract

A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).

1. A method of forming a display device comprising a plurality of pixels controlled by transistors, the method comprising:
 activating dopants in a monocrystalline layer, wherein said dopants form activated dopant regions, 
 subsequently using ion-cut to transfer said monocrystalline layer onto a glass or plastic substrate, and then 
 forming said transistors comprising said monocrystalline layer, 
 wherein forming said transistors comprises:
 forming a gate, and 
 forming a source and drain from said activated dopant regions, 
 
 wherein said transistors are processed on said glass or plastic substrate at a process temperature of less than about 400° C. 
 
     
     
       2. A method for forming a display device according to  claim 1 , wherein said display comprises at least one mono-crystallized layer transferred using ion-cut. 
     
     
       3. A method for forming a display device according to  claim 1 , further comprising: etching said display to define a plurality of pixels.