Wafer-scaled light-emitting structure

Abstract

This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate.

1. A light-emitting structure, comprising:
 a supportive substrate; 
 an anti-deforming layer for reducing the deformation of the light-emitting structure located on the supportive substrate; 
 a bonding layer located on the anti-deforming layer; and 
 a light-emitting stacked layer located on the anti-deforming layer, wherein the bonding layer connects the anti-deforming layer and the light-emitting stacked layer and the light-emitting stacked layer comprises at least an active layer; 
 wherein a thickness of the supportive substrate is smaller than about 70 μm, and 
 wherein the light-emitting structure is devoid of any substrate comprising a surface on which the light-emitting structure is grown. 
 
     
     
       2. The light-emitting structure as described in  claim 1 , wherein a material of the supportive substrate is selected from a group consisting of metal, electrical insulating material, composite material, metal matrix composite (MMC), ceramic matrix composite (CMC), Si, IP, ZnSe, AN, GaAs, SiC, GaP, GaAsP, Sapphire, ZnSe, ZnO, InP, LiGaO 2 , LiAlO 2 , and the combination thereof. 
     
     
       3. The light-emitting structure as described in  claim 1 , wherein the thickness of the supportive substrate is about 40 μm. 
     
     
       4. The light-emitting structure as described in  claim 1 , wherein a material of the anti-deforming layer is selected from a group consisting of Al x O y , SiN X , SiO x , TiO x , GaN, and the combination thereof. 
     
     
       5. The light-emitting structure as described in  claim 1 , wherein the anti-deforming layer comprises a deposition defect of molecules or a microcosmic structure. 
     
     
       6. The light-emitting structure as described in  claim 1 , wherein a thickness of the anti-deforming layer is either smaller than about 10 μm or larger than about 2 μm. 
     
     
       7. The light-emitting structure as described in  claim 1 , wherein a material of the bonding layer is selected from a group consisting of PI, BCB, PFCB, Epoxy, other organic adhesive materials, In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, Ni, AuSn, InAg, InAu, AuBe, AuGe, AuZn, PbSn, PdIn, and the combination thereof. 
     
     
       8. The light-emitting structure as described in  claim 1  further comprising a reflective layer located between the light-emitting stacked layer and the bonding layer or between the anti-deforming layer and the light-emitting stacked layer. 
     
     
       9. The light-emitting structure as described in  claim 8 , wherein a material of the reflective layer is selected from a group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Ge, Cu, Ni, AuBe, AuGe, AuZn, PbSn, the combination thereof, and DBR. 
     
     
       10. The light-emitting structure as described in  claim 1 , wherein the light-emitting stacked layer comprises a plurality of elements selected from a group consisting of Al, Ga, In, and P. 
     
     
       11. The light-emitting structure as described in  claim 1  further comprises a protective layer located on the light-emitting stacked layer. 
     
     
       12. The light-emitting structure as described in  claim 11 , wherein a material of the protective layer is selected from a group consisting of dielectric material, Su8, BCB, PFCB, Epoxy, Acrylic Resin, COC, PMMA, PET, PC, Polyetherimide, Fluorocarbon Polymer, Silicone, Glass, Al x O y , SiOx, SiN x , TiO x , SOG, the combination thereof, and other transparent materials.