Metal oxide materials and electrodes for Re-RAM

Abstract

Rewritable switching materials and methods for forming the same are described herein. One embodiment is a storage device comprising a first electrode, a state change element in contact with the first electrode, the state change element comprises Zr x Y y O z , and a second electrode in contact with the state change element. A method for forming such a storage device is also disclosed herein. Another embodiment is a storage device comprising a first electrode a state change element in contact with the first electrode, the state change comprises at least one of cerium oxide or bismuth oxide, and a second electrode in contact with the state change element. A method for forming such a storage device is also disclosed herein.

1. A storage device comprising:
 a first electrode, the first electrode comprises at least one of TiN or TaN; 
 a state change element in direct contact with the first electrode, the state change element comprises Zr x Y y O z ; and 
 a second electrode in direct contact with the Zr x Y y O z  of the state change element, the second electrode comprises at least one of LaMnO 3 , TaCN, or TiCN. 
 
     
     
       2. A storage device as recited in  claim 1  wherein z is between 2x and 25 percent more than 2x. 
     
     
       3. A storage device as recited in  claim 2  wherein the molar concentration of Y in Zr x Y y O z  is between 5 percent and 15 percent. 
     
     
       4. A storage device as recited in  claim 1  wherein the molar concentration of Y in Zr x Y y O z  is between 5 percent and 15 percent. 
     
     
       5. A storage device as recited in  claim 1  wherein the state change element comprises ZrO 2  that is doped with Y 2 O 3 . 
     
     
       6. A storage device as recited in  claim 1  wherein the second electrode comprises LaMnO 3  doped with at least one of Sr or Ca. 
     
     
       7. A storage device comprising:
 a first electrode; 
 a state change element in contact with the first electrode, the state change element has a low resistance state for SET and a high resistance state for RESET, the state change element comprises bismuth oxide; and 
 a second electrode in contact with the state change element, wherein the second electrode comprises at least one of cobalt oxide, TaCN, or TiCN. 
 
     
     
       8. The storage device of  claim 7 , wherein the second electrode comprises cobalt oxide. 
     
     
       9. The storage device of  claim 7 , wherein the second electrode comprises TaCN. 
     
     
       10. The storage device of  claim 7 , wherein the second electrode comprises TiCN. 
     
     
       11. A storage device comprising:
 a first electrode; 
 a metal oxide resistive state change element in contact with the first electrode, the state change element has a low resistance state for a first logical state and a high resistance state for a second logical state, the metal in the metal oxide is a metal other than a transition metal, the state change element comprises Ce 0  doped with Sm (Samarium); and 
 a second electrode in contact with the state change element. 
 
     
     
       12. A storage device as recited in  claim 11  wherein the second electrode comprises at least one of LaMnO 3 , nickel oxide, TaCN, or TiCN. 
     
     
       13. A storage device as recited in  claim 11  wherein the second electrode comprises cobalt oxide. 
     
     
       14. A storage device as recited in  claim 11  wherein the second electrode comprises TaCN. 
     
     
       15. A storage device as recited in  claim 11  wherein the second electrode comprises TiCN. 
     
     
       16. A method for forming a storage device comprising:
 forming a first electrode, the first electrode comprises at least one of TiN or TaN; 
 forming a state change element in direct contact with the first electrode, the state change element has a low resistance state for SET and a high resistance state for RESET, the state change element comprises of Zr x Y y O z ; and 
 forming a second electrode in direct contact with the Zr x Y y O z  of the state change element, the second electrode comprises at least one of LaMnO 3 , TaCN, or TiCN. 
 
     
     
       17. A method for forming a storage device as recited in  claim 16  wherein z is between 2x and 25 percent more than 2x. 
     
     
       18. A method for forming a storage device as recited in  claim 17  wherein the molar concentration of Y in Zr x Y y O z  is between 5 percent and 15 percent. 
     
     
       19. A method for forming a storage device comprising:
 forming a first electrode; 
 forming a resistive state change element in contact with the first electrode, the state change element has a low resistance state for a first logical state and a high resistance state for a second logical state, the state change element comprises bismuth oxide; and 
 forming a second electrode in contact with the state change element, wherein the second electrode comprises at least one of cobalt oxide, TaCN, or TiCN. 
 
     
     
       20. A method for forming a storage device as recited in  claim 19  wherein the second electrode comprises TaCN. 
     
     
       21. A method for forming a storage device as recited in  claim 19  wherein the second electrode comprises TiCN. 
     
     
       22. A method for forming a storage device comprising:
 forming a first electrode; 
 forming a metal oxide resistive state change element in contact with the first electrode, the state change element has a low resistance state for a first logical state and a high resistance state for a second logical state, the metal in the metal oxide is a metal other than a transition metal, the state change element comprises Ce 0  doped with Sm (Samarium); and 
 forming a second electrode in contact with the state change element. 
 
     
     
       23. A method for forming a storage device as recited in  claim 22  wherein the second electrode comprises TaCN. 
     
     
       24. A method for forming a storage device as recited in  claim 22  wherein the second electrode comprises TiCN.