Method for determining COP generation factors for single-crystal silicon wafer

Abstract

A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density RADIUSMAX , a minimum value of the COP density is set as COP density RADIUSMIN , a value computed by “(COP density RADIUSMAX −COP density RADIUSMIN )/COP density RADIUSMAX ” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced.

1. A method for determining a COP generation factor of a single-crystal silicon wafer, wherein a determination area of the wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set at COP density RADIUSMAX , a minimum value of the COP density is set at COP density RADIUSMIN , and a determination that the COP generation factor is attributed to a factor except for a defect induced during crystal growth is made when a value computed by “(COP density RADIUSMAX −COP density RADIUSMIN )/COP density RADIUSMAX ” is not more than a predetermined setting value. 
     
     
       2. The method for determining a COP generation factor of a single-crystal silicon wafer according to  claim 1 , wherein a width of each concentrically-divided determination segment ranges from 15 mm to 30 mm.