Gluconic acid containing photoresist cleaning composition for multi-metal device processing

Abstract

A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.

1. A semi-aqueous, alkaline cleaning composition for cleaning a multi-metal microelectronic device, the composition consisting of:
 (a) from about 10% to about 35% water; 
 (b) from about 5% to about 15% of at least one alkanolamine; 
 (c) from about 10% to about 50% solvent selected from the group consisting of N-methylpyrrolidinone or a mixture of N-methylpyrrolidinone and sulfolane; 
 (d) from about 2% to about 10% of gluconic acid or a compound producing gluconic acid by hydrolysis in water; 
 (e) from about 1% to about 8% of at least one oligoethylene glycol of the formula HO(CH 2 CH 2 O) n CH 2 CH 2 OH wherein n is 1 or more; and 
 (f) optionally from about 10% to about 40% of at least one diethylene glycol monoalkyl ether wherein the alkyl group contains from 1 to 4 carbon atoms; 
 wherein the percentages are weight percent based on the total weight of the composition and when the percentage of alkanolamine is equal to or less than 6% the amount of N-methylpyrrolidinone solvent in the composition is 20% or more, and when the percentage of alkanolamine is 9% or more the amount on N-methyl pyrrolidinone may be equal to or less than 20%. 
 
     
     
       2. A semi-aqueous, alkaline cleaning composition of  claim 1  consisting of
 (a) from about 10% to about 30% water; 
 (b) from about 6% to about 10% of at least one alkanolamine; 
 (c) from about 20% to about 50% of solvent; 
 (d) from about 2% to about 6% of gluconic acid or compound producing gluconic acid by hydrolysis in water; 
 (e) from about 2% to about 6% oligoethylene glycol of the formula HO(CH 2 CH 2 O) n CH 2 CH 2 OH wherein n is 1, 2, 3 or 4; and 
 (f) from about 20% to about 30% of at least one diethylene glycol monoalkyl ether. 
 
     
     
       3. A semi-aqueous, alkaline cleaning composition of  claim 2  wherein:
 the alkanolamine consists of mono isopropanol amine; 
 the oligoethylene glycol consists of tetraethylene glycol; and 
 the diethylene glycol monoalkyl ether consists of diethylene glycol monomethyl ether. 
 
     
     
       4. A semi-aqueous, alkaline cleaning composition of  claim 2  consisting of
 15% to 30% water; 
 6% to 8% mono isopropanol amine; 
 from 10% to 30% N-methylpyrrolidinone and 0% to 20% sulfolane; 
 2% to 6% gluconic acid; 
 3% to 5% oligoethylene glycol; and 
 20% to 30% diethylene glycol monomethyl ether. 
 
     
     
       5. A semi-aqueous, alkaline cleaning composition of  claim 1  consisting of
 about 28% water; 
 about 6% mono isopropanol amine; 
 about 10% sulfolane and 20% N-methylpyrrolidinone; 
 about 3% gluconic acid; 
 about 5% tetraethylene glycol; and 
 about 28% diethyleneglycol monomethyl ether. 
 
     
     
       6. A semi-aqueous, alkaline cleaning composition of  claim 1  consisting of
 about 25% water; 
 about 7% diethanolamine; 
 about 40% N-methylpyrrolidinone; 
 about 5% gluconic acid δ-lactone; 
 about 3% tetraethylene glycol; and 
 about 20% diethylene glycol monomethyl ether. 
 
     
     
       7. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of  claim 1  for a time and at a temperature to accomplish the cleaning of the device. 
     
     
       8. The process according to  claim 7  wherein the cleaning is conducted at a temperature of about 50° C. to about 60° C. 
     
     
       9. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of  claim 2  for a time and at a temperature to accomplish the cleaning of the device. 
     
     
       10. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of  claim 3  for a time and at a temperature to accomplish the cleaning of the device. 
     
     
       11. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of  claim 4  for a time and at a temperature to accomplish the cleaning of the device. 
     
     
       12. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of  claim 5  for a time and at a temperature to accomplish the cleaning of the device. 
     
     
       13. A process for cleaning a multi-metal microelectronic device comprising contacting the device with a cleaning composition of  claim 6  for a time and at a temperature to accomplish the cleaning of the device.