Light emitting device and manufacturing method thereof

Abstract

The present invention provides a light emitting device loaded with a light emitting semiconductor chip with a protective film formed on a light emitting portion, in which the protective film contains a first dielectric film formed of aluminum oxynitride, a second dielectric film formed of silicon nitride or silicon oxynitride, and a third dielectric film formed of an oxide or a fluoride, the first dielectric film is located more toward the light emitting portion than the second dielectric film, and the second dielectric film is located more toward the light emitting portion than the third dielectric film, and a manufacturing method of the light emitting device.

1. A light emitting device comprising:
 a light emitting semiconductor chip including an active layer, a light emitting portion, and a protective film, said active layer formed of a nitride III-V group compound semiconductor, said light emitting portion including said nitride III-V group compound semiconductor, said protective film formed on said light emitting portion, wherein said light emitting semiconductor chip is not hermetically sealed, said protective film contains a first dielectric film formed of aluminum oxynitride, a second dielectric film formed of silicon nitride or silicon oxynitride, and a third dielectric film formed of an oxide or a fluoride, said first dielectric film is located more toward said light emitting portion than said second dielectric film, said second dielectric film is located more toward said light emitting portion than said third dielectric film, said light emitting semiconductor chip contains a nitride III-V group compound semiconductor, and said light emitting semiconductor chip is a semiconductor laser chip. 
 
     
     
       2. The light emitting device according to  claim 1 , wherein said light emitting semiconductor chip is loaded in a state of a frame package. 
     
     
       3. The light emitting device according to  claim 1 , wherein said third dielectric film is formed of an oxide, and said third dielectric film is formed of at least one type of oxide selected from the group consisting of aluminum, silicon, hafnium, tantalum, zirconium, niobium, titanium, and yttrium. 
     
     
       4. The light emitting device according to  claim 1 , wherein said third dielectric film is formed of a fluoride, and said third dielectric film is formed of at least one type of fluoride selected from the group consisting of magnesium and calcium. 
     
     
       5. A light emitting device comprising:
 a light emitting semiconductor chip including an active layer, a light emitting portion, and a protective film, said active layer formed of a nitride III-V group compound semiconductor, said light emitting portion including said nitride III-V group compound semiconductor, said protective film formed on said light emitting portion, wherein said light emitting semiconductor chip is hermetically sealed with an adhesive containing an organic substance, said protective film contains a first dielectric film formed of aluminum oxynitride, a second dielectric film formed of silicon nitride or silicon oxynitride, and a third dielectric film formed of an oxide or a fluoride, said first dielectric film is located more toward said light emitting portion than said second dielectric film, and said second dielectric film is located more toward said light emitting portion than said third dielectric film. 
 
     
     
       6. The light emitting device according to  claim 5 , wherein said light emitting semiconductor chip contains a nitride III-V group compound semiconductor. 
     
     
       7. The light emitting device according to  claim 5 , wherein said light emitting semiconductor chip is a semiconductor laser chip. 
     
     
       8. The light emitting device according to  claim 5 , wherein said third dielectric film is formed of an oxide, and said third dielectric film is formed of at least one type of oxide selected from the group consisting of aluminum, silicon, hafnium, tantalum, zirconium, niobium, titanium, and yttrium. 
     
     
       9. The light emitting device according to  claim 5 , wherein said third dielectric film is formed of a fluoride, and said third dielectric film is formed of at least one type of fluoride selected from the group consisting of magnesium and calcium. 
     
     
       10. A manufacturing method of a light emitting device loaded with a light emitting semiconductor chip including an active layer, a light emitting portion, and a protective film, said active layer formed of a nitride III-V group compound semiconductor, said light emitting portion including said nitride III-V group compound semiconductor, said protective film formed on said light emitting portion, the method comprising:
 forming a first dielectric film formed of aluminum oxynitride contained in said protective film; 
 forming a second dielectric film formed of silicon nitride or silicon oxynitride contained in said protective film; 
 forming a third dielectric film formed of an oxide or a fluoride contained in said protective film; and 
 loading said light emitting semiconductor chip without hermetically sealing. 
 
     
     
       11. A manufacturing method of a light emitting device loaded with a light emitting semiconductor chip including an active layer, a light emitting portion, and a protective film, said active layer formed of a nitride III-V group compound semiconductor, said light emitting portion including said nitride III-V group compound semiconductor, said protective film formed on said light emitting portion, the method comprising:
 forming a first dielectric film formed of aluminum oxynitride contained in said protective film; 
 forming a second dielectric film formed of silicon nitride or silicon oxynitride contained in said protective film; 
 forming a third dielectric film formed of an oxide or a fluoride contained in said protective film; and 
 hermetically sealing said light emitting semiconductor chip together with an adhesive containing an organic substance and loading the semiconductor chip. 
 
     
     
       12. The light emitting device according to  claim 1 , wherein the light emitting portion is a cavity edge in a light emitting side of the semiconductor laser chip, the light emitting side being parallel to a light reflection side of the semiconductor laser chip. 
     
     
       13. The light emitting device according to  claim 1 , wherein the third dielectric film has an oxygen content of 50 atomic % or more.