Laser power converter for data detection and optical-to-electrical power generation

Abstract

The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).

1. A laser power converter (LPC) for data detection and optical-to-electrical (O-E) power generation, comprising:
 a photodiode (PD) unit,
 wherein said PD unit comprises a PD, a first end and a second end; 
 wherein said PD is obtained on an n-type distributed bragg reflector (n-DBR) and is separated with said n-DBR by a semi-insulation layer between said PD and said n-DBR; 
 wherein said PD comprises a plurality of layers and said layers are serially connected and stacked to obtain an epi-structure having a p-i-n interface; 
 wherein said layers of said PD comprises
 an etching stop layer, said etching stop layer being an un-doped first semiconductor located on said semi-insulation layer; 
 a buffer layer, said buffer layer being an un-doped second semiconductor located on said etching stop layer; 
 an n-type ohmic contact layer, said n-type ohmic contact layer being an n-type doped third semiconductor located on said buffer layer, said n-type ohmic contact layer having an n-type metal conductive layer; 
 a transport layer, said transport layer being a fourth semiconductor located on said n-type said ohmic contact layer, said transport layer being selected from a group consisting of an un-doped semiconductor, an n-type graded doped semiconductor and a graded bandgap semiconductor; 
 a graded bandgap layer, said graded bandgap layer being an un-doped fifth semiconductor located on said transport layer; 
 a setback layer, said setback layer being an un-doped sixth semiconductor located on said graded bandgap layer; 
 an absorption layer, said absorption layer being a p-type doped seventh semiconductor located on said setback layer; 
 a diffusion block layer, said diffusion block layer being a p-type doped eighth semiconductor located on said absorption layer; and 
 a p-type ohmic contact layer, said p-type ohmic contact layer being a p-type doped ninth semiconductor located on said diffusion block layer, said p-type ohmic contact layer having a p-type metal conductive layer; 
 
 
 a load resistance,
 wherein said load resistance is coupled between said first end of said PD and said second end of said PD; and 
 
 a direct-current to direct-current converter (DC-DC converter),
 wherein said DC-DC converter is coupled between said first end of said PD and said second end of said PD. 
 
 
     
     
       2. The LPC according to  claim 1 ,
 wherein said PDs of said LPCs are serially connected. 
 
     
     
       3. The LPC according to  claim 1 ,
 wherein said PD is a uni-traveling-carrier photodiode (UTC-PD). 
 
     
     
       4. The LPC according to  claim 1 ,
 wherein said PD further comprises a lateral protection layer. 
 
     
     
       5. The LPC according to  claim 1 ,
 wherein said etching stop layer is made of un-doped AlAs; 
 wherein said buffer layer is made of un-doped AlGaAs; 
 wherein said n-type ohmic contact layer is made of n-type doped AlGaAs; 
 wherein said transport layer is made of a semiconductor of a doped type, said semiconductor is selected from a group consisting of AlGaAs, InGaP, InP and InAlGaAs, and said doped type is selected from a group consisting of an un-doped type, a graded n-type doped type and a graded bandgap type; 
 wherein said graded bandgap layer is made of an un-doped semiconductor and said semiconductor is selected from a group consisting of AlGaAs and InAlGaAs; 
 wherein said setback layer is made of un-doped GaAs; 
 wherein said absorption layer is made of a p-type doped semiconductor and said semiconductor is selected from a group consisting of GaAs and GaAsSb; 
 wherein said diffusion block layer is made of p-type doped AlGaAs; and 
 wherein said p-type ohmic contact layer is made of p-type doped GaAs. 
 
     
     
       6. The LPC according to  claim 1 ,
 wherein said transport layer is made of graded bandgap In x Al y Ga 0.48-y As and x is 0.52 and y is a value between 0.2 and 0.48. 
 
     
     
       7. The LPC according to  claim 1 ,
 wherein said absorption layer is made of p-type doped GaAs 0.51 Sb 0.49 .