Semiconductor device having a cooling function component

Abstract

A semiconductor device includes: a cooling function component including an active region made of an impurity region and formed on a surface of a semiconductor layer, an N-type gate made of a semiconductor including an N-type impurity, a P-type gate made of a semiconductor including a P-type impurity, a first metal wiring connected to the N-type gate, the P-type gate and the active region, a second metal wiring connected to the P-type gate and the N-type gate, and a heat releasing portion connected to the second metal wiring for releasing heat to the outside.

1. A semiconductor device comprising a cooling function component including:
 an active region made of an impurity region and formed on a surface of a semiconductor layer; 
 an N-type gate made of a semiconductor including an N-type impurity; 
 a P-type gate made of a semiconductor including a P-type impurity; 
 a first metal wiring connected to the N-type gate, the P-type gate and the active region; 
 a second metal wiring connected to the P-type gate and the N-type gate; 
 a heat releasing portion connected to the second metal wiring for releasing heat to the outside; 
 a silicide block made of an insulator, the silicide block being formed respectively at a part of each of surfaces of the N-type gate and the P-type gate; and 
 a silicide made of a metal element and silicon, the silicide being formed on two portions of each of the surfaces of the N-type gate and the P-type gate, the two portions of each respective surface being separated by the silicide block, the silicide being also formed on a surface of the active region, 
 wherein,
 the semiconductor layer, the N-type gate, and the P-type gate are made of silicon, 
 the first metal wiring is connected to the silicide at one of the two portions as well as at the surface of the active region, and 
 the second metal wiring is connected to the silicide at the other of the two portions. 
 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the heat releasing portion is thermally connected to the second metal wiring and includes a metal layer. 
     
     
       3. The semiconductor device according to  claim 2 , wherein the heat releasing portion includes a heatsink that is thermally connected to the metal layer. 
     
     
       4. The semiconductor device according to  claim 1 , wherein a plural number of the N-type gates and the P-type gates are electrically connected in an alternating arrangement. 
     
     
       5. The semiconductor device according to  claim 1 , wherein an active component is formed on the semiconductor layer on which the cooling function component is formed. 
     
     
       6. The semiconductor device according to  claim 5 , further comprising:
 another impurity region formed in the semiconductor layer, the active component including the another impurity region, 
 a contact layer electrically connected to the another impurity region, 
 and the first metal wiring and the second metal wiring are made of the same metal layer as the contact layer. 
 
     
     
       7. The semiconductor device according to  claim 5 , wherein:
 the semiconductor layer includes a semiconductor well region, and 
 the active component and the active region of the cooling function component are both formed in the semiconductor well region in the semiconductor layer. 
 
     
     
       8. The semiconductor device according to  claim 1 , wherein:
 a power source or a ground potential of a circuit block and a power source or a ground potential of the cooling function component are connected in common, and 
 a control circuit dynamically controls the power source or the ground potential connected in common. 
 
     
     
       9. The semiconductor device according to  claim 1 , wherein the N-type gate and the P-type gate are respectively formed on a component isolation layer formed in the semiconductor layer.