Method for treating the dislocation in a GaN-containing semiconductor layer

Abstract

A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.

What is claimed is: 
     
       1. A method for treating the GaN-containing semiconductor epitaxy layer by using the etching process to remove the threading dislocation, comprising:
 providing a substrate, wherein the substrate being selected from the group consisting of silicon carbide, silicon, lithium aluminate (LiAlO 2 ), and single crystal zinc oxide substrate and free-standing GaN substrate; 
 forming a GaN-containing semiconductor epitaxy layer with a threading dislocation on the substrate by using Molecular Beam Epitaxy (MBE) method; 
 using an etching gas to perform an etching process to remove the threading dislocation in the GaN-containing epitaxy semiconductor, wherein the etching gas being selected from the group consisting of hydrogen, hydrogen halide, and halide gas, a temperature range for the etching process being 800° C. to 1200° C., a pressure range of the etching process being 10 torr to 800 torr for 10 minutes; and 
 immersing the etched GaN-containing epitaxy semiconductor layer in an acid solution for about 15 minutes to 30 minutes, wherein the acid solution being mixed by 1:3 of a phosphoric acid and a sulfuric acid; 
 wherein the GaN-containing semiconductor epitaxy layer being selected from the group consisting of GaN bulk, n-type doping GaN-containing semiconductor layer, p-type doping GaN-containing semiconductor layer, Quantum Wells GaN-containing semiconductor layer, Multiple Quantum Wells GaN-containing semiconductor layer, and single crystal GaN. 
 
     
     
       2. The method according to  claim 1 , wherein the structure of the single crystal GaN is selected from the group consisting of Zinc Blende, and rock salt. 
     
     
       3. The method according to  claim 1 , wherein an inert gas is introduced to the etching process, wherein the inert gas is selected from the group consisting of nitrogen and argon.