Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same

Abstract

A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.

What is claimed is: 
     
       1. A positive resist composition for use with electron beam, X-ray or EUV, comprising:
 a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; 
 a compound capable of generating an acid upon irradiation with actinic rays or radiation; 
 a basic compound; and 
 an organic solvent, 
 wherein the entire solids content concentration in the resist composition is from 1.0 to 4.5 mass %, the ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solids content, and (A) the resin capable of decomposing under an action of an acid to increase the dissolution rate in an aqueous alkali solution has a repeating unit represented by formula (II) and a repeating unit represented by formula (III): 
 
       
         
           
           
               
               
           
         
         wherein each R 01  independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group; 
         L 1  and L 2 , which may be the same or different, each represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group; 
         M represents a single bond or a divalent linking group; 
         Q represents an alkyl group, a cycloalkyl group, an aryloxy group or an alicyclic or aromatic cyclic group which may contain a hetero atom; 
         at least two members out of Q, M and L 1  may combine to form a 5- or 6-membered ring; 
         A represents a halogen atom, a cyano group, an acyl group, an alkyl group, an alkoxy group, an acyloxy group or an alkoxycarbonyl group, and when a plurality of A's are present, the plurality of A's may be the same or different; and 
         m and n each independently represents an integer of 0 to 4. 
       
     
     
       2. The positive resist composition according to  claim 1 ,
 wherein m and n are not 0 at the same time. 
 
     
     
       3. The positive resist composition according to  claim 1 ,
 wherein (A) the resin further has a repeating unit represented by formula (IV): 
 
       
         
           
           
               
               
           
         
         wherein each R 01  independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group; 
         B represents a halogen atom, a cyano group, an acyl group, an alkyl group, an alkoxy group, an acyloxy group or an alkoxycarbonyl group, and when a plurality of B's are present, the plurality of B's may be the same or different; and 
         p represents an integer of 0 to 5. 
       
     
     
       4. The positive resist composition according to  claim 1 ,
 wherein the molecular weight of the basic compound is from 250 to 1,000, and the ratio of the basic compound is from 1.0 to 8.0 mass % based on the entire solids content of the resist composition. 
 
     
     
       5. The positive resist composition according to  claim 1 ,
 wherein the compound capable of generating an acid upon irradiation with actinic rays or radiation is a compound represented by formula (I): 
 
       
         
           
           
               
               
           
         
         wherein R 1  to R 13  each independently represents a hydrogen atom or a substituent; 
         Z represents a single bond or a divalent linking group; and 
         X −  represents a counter anion. 
       
     
     
       6. The positive resist composition according to  claim 5 ,
 wherein at least one of R 1  to R 13  is a substituent containing an alcoholic hydroxyl group. 
 
     
     
       7. A pattern forming method, comprising:
 forming a resist film by using the positive resist composition according to  claim 1 ; and 
 subjecting the resist film to exposure with electron beam, X-ray or EUV and development. 
 
     
     
       8. A positive resist composition for use with electron beam, X-ray or EUV, comprising:
 (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; 
 (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; 
 (C) a basic compound; and 
 (D) an organic solvent, 
 wherein the entire solids content concentration in the resist composition is from 1.0 to 4.5 mass %, the ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solids content, and 50 mass % or more of (D) the organic solvent is a propylene glycol monomethyl ether. 
 
     
     
       9. A pattern forming method, comprising:
 forming a resist film by using the positive resist composition according to  claim 8 ; and 
 subjecting the resist film to exposure with electron beam, X-ray or EUV and development.