Method of manufacturing semiconductor device

Abstract

The method may include providing a first substrate, the first substrate including a sacrificial layer, an active layer having an image sensor circuit portion and an interconnection layer electrically connected to the image sensor circuit portion sequentially stacked; performing an edge-trimming process with respect to the first substrate to form an interconnection layer pattern, an active layer pattern and a sacrificial layer pattern; adhering the first substrate to a second substrate; removing the sacrificial layer pattern to expose the active layer pattern; and forming a transillumination layer to provide light to an image sensor portion on the active layer pattern.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device comprising:
 providing a first substrate, the first substrate including a sacrificial layer, an active layer having an image sensor circuit portion and an interconnection layer electrically connected to the image sensor circuit portion sequentially stacked,
 the interconnection layer including at least one interconnection inside; 
 
 performing an edge-trimming process with respect to the first substrate to form an interconnection layer pattern, an active layer pattern and a sacrificial layer pattern by, 
 sequentially performing a dry etching process with respect to an edge of the interconnection layer and an edge of the active layer to form the interconnection layer pattern and the active layer pattern, and 
 performing a dry etching process with respect to a portion of an edge of the sacrificial layer to form the sacrificial layer pattern; 
 adhering the first substrate to a second substrate after performing the edge-trimming process; 
 removing the sacrificial layer pattern to expose the active layer pattern; and 
 forming a transillumination layer on the active layer pattern such that the active layer pattern is disposed between the transillumination layer and the interconnection layer pattern, the transillumination layer configured to transmit light to the image sensor circuit portion. 
 
     
     
       2. The method of  claim 1 , wherein adhering the first substrate to the second substrate comprises adhering the interconnection layer pattern to the second substrate. 
     
     
       3. The method of  claim 1 , wherein performing the edge-trimming process with respect to the first substrate comprises removing a portion of the first substrate by dry etching using one of an anisotropic etching, a laser beam and a blade. 
     
     
       4. The method of  claim 1 , wherein removing the sacrificial layer pattern comprises polishing an entire portion of the sacrificial layer pattern until the active layer pattern is exposed. 
     
     
       5. The method of  claim 1 , wherein removing the sacrificial layer pattern comprises polishing a portion of the sacrificial layer pattern, and performing a wet etching process with respect to the other portion of sacrificial layer pattern until the active layer pattern is exposed. 
     
     
       6. The method of  claim 1 , wherein forming the transillumination layer comprises:
 forming a color filter layer on the active layer pattern: and 
 forming a microlens on the color filter layer. 
 
     
     
       7. The method of  claim 1 , wherein the sacrificial layer is a silicon substrate. 
     
     
       8. The method of  claim 1 , further comprising:
 forming the active layer on the sacrificial layer, the active layer made of single crystalline silicon using an epitaxial technique. 
 
     
     
       9. The method of  claim 1 , further comprising:
 forming the active layer on the sacrificial layer, the active layer and the sacrificial layer including a level portion and an edge portion connected to the level portion, the level portion including a first surface and a second surface facing each other. 
 
     
     
       10. The method of  claim 9 , further comprising:
 forming the active layer on the sacrificial layer, the active layer having a first depth in a vertical direction from the first surface; and 
 forming an image sensor circuit portion in the first depth. 
 
     
     
       11. The method of  claim 10 , wherein forming the image sensor circuit portion in the first depth further comprises electrically connecting a transistor to a photodetector. 
     
     
       12. The method of  claim 10 , further comprising:
 electrically connecting the interconnection to the image sensor circuit portion. 
 
     
     
       13. The method of  claim 9 , wherein the interconnection layer pattern, the active layer pattern and the sacrificial layer pattern include a third surface perpendicular to the first surface. 
     
     
       14. A method of manufacturing a semiconductor device comprising:
 providing a first substrate, the first substrate including a sacrificial layer, an active layer having an image sensor circuit portion and an interconnection layer electrically connected to the image sensor circuit portion sequentially stacked,
 the interconnection layer including at least one interconnection inside; 
 
 performing an edge-trimming process with respect to the first substrate to form an interconnection layer pattern, an active layer pattern and a sacrificial layer pattern; 
 adhering the first substrate to a second substrate; 
 removing the sacrificial layer pattern to expose the active layer pattern; and 
 forming a transillumination layer on the active layer pattern such that the active layer pattern is disposed between the transillumination layer and the interconnection layer pattern, the transillumination layer configured to transmit light to the image sensor circuit portion, wherein 
 the edge-trimming process is performed after adhering the first substrate to the second substrate,
 the adhering the first substrate to the second substrate comprises adhering the interconnection layer to the second substrate, and 
 
 the performing the edge-trimming process with respect to the first substrate further includes, 
 removing an edge of the sacrificial layer by dry etching to form the sacrificial layer pattern, and 
 sequentially removing an edge of the active layer and an edge of the interconnection layer by the dry etching to form the active layer pattern and the interconnection layer pattern. 
 
     
     
       15. A method of manufacturing a semiconductor device comprising:
 forming an active layer on a first substrate, the active layer including a photodetector; 
 forming an interconnection layer on the active layer, the interconnection layer electrically connected to the photodetector; 
 adhering the interconnection layer to a second substrate; 
 removing the first substrate to expose a surface of the active layer; 
 performing an edge-trimming process that includes,
 removing an edge portion of the interconnection layer to form an interconnection layer pattern, and 
 removing an edge portion of the active layer to form an active layer pattern; 
 
 forming a transillumination layer on an exposed surface of the active layer pattern such that the active layer pattern is disposed between the transillumination layer and the interconnection layer pattern, the transillumination layer configured to transmit light to the photodetector.