RF MEMS switch device and manufacturing method thereof

Abstract

The present invention relates to an RF MEMS switch device comprising: a substrate; a bias electrode positioned on the substrate and supplying bias voltage; a pair of signal electrodes positioned to be spaced-apart each other on the substrate and transmitting an RF signal from one side to the other side; a dielectric layer formed on upper part of the pair of signal electrodes to be overlapped with the pair of signal electrodes; a membrane electrode formed on the dielectric layer to be overlapped with the pair of signal electrodes and the dielectric layer; a bias line connecting between the membrane electrode and the bias electrode; at least one pooling electrode formed to be overlapped with the membrane electrode and having the dielectric layer be interposed therebetween; and a pooling line connecting any one of the pair of signal electrodes and the pooling electrode, and manufacturing method thereof.

What is claimed is: 
     
       1. An RF MEMS switch device comprising:
 a substrate; 
 a bias electrode positioned on the substrate and supplying bias voltage; 
 a pair of signal electrodes positioned to be spaced-apart each other on the substrate and transmitting an RF signal from one side to the other side; 
 a dielectric layer formed on upper part of the pair of signal electrodes to be overlapped with the pair of signal electrodes; 
 a membrane electrode formed on the dielectric layer to be overlapped with the pair of signal electrodes and the dielectric layer; 
 a bias line positioned on the substrate, being formed of a first high resistance conductive material, and connecting the membrane electrode with the bias electrode; 
 at least one pooling electrode formed to be overlapped with the membrane electrode and having the dielectric layer be interposed therebetween; and 
 a pooling line positioned on the substrate, being formed of a second high resistance conductive material, and connecting any one of the pair of signal electrodes with the pooling electrodes; 
 wherein the pair of signal electrodes and the pooling electrode make the membrane electrode bend by using at least one of differences in electric potential between the pair of signal electrodes and the membrane electrode and between the pooling electrode and the membrane electrode. 
 
     
     
       2. The RF MEMS switch device of  claim 1 , wherein the pooling electrode is formed to be insulated from the signal electrode on the same plane with the signal electrode. 
     
     
       3. The RF MEMS switch device of  claim 1 , wherein the first or second high resistance conductive material comprises any one of SiCr, Ti, and TiW or a conductive material comprising any one of doped Si and SiC. 
     
     
       4. The RF MEMS switch device of  claim 1 , wherein the membrane electrode contacts with the dielectric layer to transmit an RF signal applied to one side of the signal electrodes to the other side of the signal electrodes, when the bias voltage is supplied. 
     
     
       5. The RF MEMS switch device of  claim 1 , further comprising at least one connecting electrode connected to the membrane electrode, wherein the connecting electrode is electrically connected with the bias line.