Sintered porous metal body and a method of manufacturing the same

Abstract

A sintered porous metal body, which has a sintered structure having a volumetric porosity of 10 to 90%, wherein there are at least one powder particles selected from the group consisting of dielectric material powders and semiconductor material powders that absorb energy of electromagnetic wave having a frequency of 300 MHz to 300 GHz among the metal crystalline particles constituting the sintered body, wherein the particles are substantially homogeneously dispersed in the sintered body, and wherein the metal particles are sintered to bond each other to be united to constitute pores. The invention discloses a method of manufacturing the sintered porous metal body.

What is claimed is: 
     
       1. A sintered porous metal body, which has a sintered structure having a volumetric porosity of 61 to 90%, wherein there is at least one kind of powder particles selected from the group consisting of dielectric material powders and semiconductor material powders that absorb energy of electromagnetic wave having a frequency of 300 MHz to 300 GHz among metal crystalline particles constituting the sintered body, wherein the particles are substantially homogeneously dispersed in the sintered body, wherein the metal crystalline particles are sintered with pores formed by removing spacer powder therefrom, and wherein the metal crystalline particles are formed from aluminum or aluminum alloy powder. 
     
     
       2. The sintered porous metal body according to  claim 1 , wherein the particles are dispersed in the metal crystalline particles. 
     
     
       3. The sintered porous metal body according to  claim 1 , wherein the pores have a cubic form. 
     
     
       4. The sintered porous metal body according to  claim 1 , wherein the pores have an undefined form. 
     
     
       5. The sintered porous metal body according to  claim 1 , wherein the dielectric material powder is a member selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride and zirconia. 
     
     
       6. The sintered porous metal body according to  claim 1 , wherein an average particle size of the dielectric material powder and/or semiconductor material powder is 5 μm or less. 
     
     
       7. The sintered porous metal body according to  claim 1 , wherein an amount of the dielectric material powder or the semiconductor material powder is 0.4 to 10% by weight per weight of the metal powder. 
     
     
       8. The sintered porous metal body according to  claim 1 , wherein the particle size of the metal powder is 30 μm or less. 
     
     
       9. The sintered porous metal body according to  claim 1 , wherein the volumetric porosity of the sintered body is 61 to 82%.