US8513466B2ActiveUtilityPatentIndex 45
Class of soluble, photooxidatively resistant acene derivatives
Est. expiryNov 30, 2029(~3.4 yrs left)· nominal 20-yr term from priority
C07C 321/28C07C 323/09
45
PatentIndex Score
0
Cited by
37
References
20
Claims
Abstract
The present invention is directed towards a new class of semi-conducting acene derivatives. These compounds are all soluble species and they all possess superior resistance to photooxidation as compared to their counterparts that lack the substitution patterns disclosed herein.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A photooxidatively resistant acene composition selected from the group consisting of:
wherein R 1 is any group containing pi (or π) electrons that is capable of participating in ππ-stacking interactions with the central acene core and R 2 through R 11 represent any group chosen from the following list: hydrogen, alkyl, aryl, heteroaryl, nitrile, carbonyl, trifluoromethyl, halogen, alkylthio, arylthio, alkynyl.
2. The composition of claim 1 , wherein said photooxidatively resistant acene is:
3. The composition of claim 1 , wherein said photooxidatively resistant acene is:
4. The composition of claim 1 , wherein said photooxidatively resistant acene is:
5. The composition of claim 1 , wherein said photooxidatively resistant acene is:
6. The composition of claim 1 , wherein said photooxidatively resistant acene is:
7. The composition of claim 1 , wherein said photooxidatively resistant acene is:
8. The composition of claim 1 , wherein R 1 is selected from a group consisting carbonyl moieties, alkene moieties, alkyne moieties, diene moieties and aromatic moieties.
9. The composition of claim 1 , wherein said photooxidatively resistant acene is:
10. The composition of claim 1 , wherein said photooxidatively resistant acene is:
11. An electronic device comprising an acene derivative selected from one or more of the group consisting of:
wherein R 1 is any group containing pi (or π) electrons that is capable of participating in ππ-stacking interactions with the central acene core and R 2 through R 11 represent any group chosen from the following list: hydrogen, alkyl, aryl, heteroaryl, nitrile, carbonyl, trifluoromethyl, halogen, alkylthio, arylthio, alkynyl.
12. The acene derivative of the electronic device of claim 11 , wherein R 1 is selected from a group consisting of carbonyl moieties, alkene moieties, alkyne moieties, diene moieties and aromatic moieties.
13. The composition of claim 11 , wherein said photooxidatively resistant acene is:
14. The composition of claim 11 , wherein said photooxidatively resistant acene is:
15. The composition of claim 11 , wherein said photooxidatively resistant acene is:
16. The composition of claim 11 , wherein said photooxidatively resistant acene is:
17. The composition of claim 11 , wherein said photooxidatively resistant acene is:
18. The composition of claim 11 , wherein said photooxidatively resistant acene is:
19. The photooxidatively resistant acene of the electronic device of claim 11 , wherein the photooxidatively resistant acene has the structure
20. The photooxidatively resistant acene of the electronic device of claim 11 , wherein the photooxidatively resistant acene has the structure:Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.