Method of manufacturing semiconductor device

Abstract

To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed to cleave the semiconductor substrate; thus an SOI substrate is manufactured. Even if metal ions enter the semiconductor substrate together with the hydrogen ions in the step of hydrogen ion irradiation, the effect of metal contamination can be suppressed by the gettering process. Accordingly, the irradiation with hydrogen ions can be performed positively by an ion doping method.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; and 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       2. The method of manufacturing a semiconductor device according to  claim 1 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       3. The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       4. The method of manufacturing a semiconductor device according to  claim 1 , wherein the second temperature is 400 ° C. or higher and 700 ° C. or lower. 
     
     
       5. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween; 
 irradiating a portion of the semiconductor layer with a Group 18 element to form a gettering site; and 
 heating the semiconductor layer at a third temperature, whereby a metal element in the semiconductor layer is diffused into the gettering site, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       6. The method of manufacturing a semiconductor device according to  claim 5 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       7. The method of manufacturing a semiconductor device according to  claim 5 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       8. The method of manufacturing a semiconductor device according to  claim 5 , wherein the second temperature is 400 ° C. or higher and 700 ° C. or lower. 
     
     
       9. The method of manufacturing a semiconductor device according to  claim 5 , wherein the third temperature is 500 ° C. or higher and 700 ° C. or lower. 
     
     
       10. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween; 
 etching a part of the semiconductor layer to form a semiconductor island; 
 forming an insulating film over the semiconductor island; 
 forming a gate electrode over the semiconductor island with the insulating film therebetween; and 
 forming a source electrode and a drain electrode over the insulating film, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       11. The method of manufacturing a semiconductor device according to  claim 10 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       12. The method of manufacturing a semiconductor device according to  claim 10 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       13. The method of manufacturing a semiconductor device according to  claim 10 , wherein the second temperature is 400° C. or higher and 700 ° C. or lower. 
     
     
       14. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween; 
 etching a part of the semiconductor layer to form a semiconductor island; 
 forming an insulating film over the semiconductor island; 
 forming a gate electrode over the semiconductor island with the insulating film therebetween; 
 irradiating a region of the semiconductor island with a Group 18 element to form a gettering site, wherein the region does not overlap with the gate electrode; 
 heating the semiconductor island at a third temperature, whereby a metal element in the semiconductor island is diffused into the gettering site; and 
 forming a source electrode and a drain electrode over the insulating film, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ± ions, and the H 3   +  ions. 
 
     
     
       15. The method of manufacturing a semiconductor device according to  claim 14 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       16. The method of manufacturing a semiconductor device according to  claim 14 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       17. The method of manufacturing a semiconductor device according to  claim 14 , wherein the second temperature is 400 ° C. or higher and 700 ° C. or lower. 
     
     
       18. The method of manufacturing a semiconductor device according to  claim 14 , wherein the third temperature is 500 ° C. or higher and 700 ° C. or lower. 
     
     
       19. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween; 
 etching a part of the semiconductor layer to form a semiconductor island; 
 forming an insulating film over the semiconductor island; 
 forming a gate electrode over the semiconductor island with the insulating film therebetween; 
 irradiating an impurity element serving as a donor or an acceptor into a region of the semiconductor island, wherein the region does not overlap with the gate electrode; 
 irradiating the region with a Group 18 element to form a gettering site; 
 heating the semiconductor island at a third temperature, whereby a metal element in the semiconductor island is diffused into the gettering site; and 
 forming a source electrode and a drain electrode over the insulating film, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       20. The method of manufacturing a semiconductor device according to  claim 19 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       21. The method of manufacturing a semiconductor device according to  claim 19 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       22. The method of manufacturing a semiconductor device according to  claim 19 , wherein the second temperature is 400 ° C. or higher and 700 ° C. or lower. 
     
     
       23. The method of manufacturing a semiconductor device according to  claim 19 , wherein the third temperature is 500 ° C. or higher and 700 ° C. or lower. 
     
     
       24. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween; 
 etching a part of the semiconductor layer to form a semiconductor island; 
 forming an insulating film over the semiconductor island; 
 forming a gate electrode over the semiconductor island with the insulating film therebetween; 
 irradiating a region of the semiconductor island with a Group 18 element to form a gettering site, wherein the region does not overlap with the gate electrode; 
 irradiating an impurity element serving as a donor or an acceptor into the region; 
 heating the semiconductor island at a third temperature, whereby a metal element in the semiconductor island is diffused into the gettering site; and 
 forming a source electrode and a drain electrode over the insulating film, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       25. The method of manufacturing a semiconductor device according to  claim 24 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       26. The method of manufacturing a semiconductor device according to  claim 24 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       27. The method of manufacturing a semiconductor device according to  claim 24 , wherein the second temperature is 400 ° C. or higher and 700 ° C. or lower. 
     
     
       28. The method of manufacturing a semiconductor device according to  claim 24 , wherein the third temperature is 500 ° C. or higher and 700 ° C. or lower. 
     
     
       29. A method of manufacturing a semiconductor device:
 preparing a base substrate and a semiconductor substrate; 
 irradiating the semiconductor substrate with ions, whereby a damaged region is formed in the semiconductor substrate; 
 forming a bonding layer over at least one of the base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 heating the semiconductor substrate and the base substrate by a heating apparatus at a first temperature; 
 heating the semiconductor substrate and the base substrate by a rapid thermal annealing apparatus at a second temperature, so that a semiconductor layer separated at the damaged region of the semiconductor substrate is formed over the base substrate with the bonding layer therebetween; 
 etching a part of the semiconductor layer to form a semiconductor island; 
 forming an insulating film over the semiconductor island; 
 forming a gate electrode over the semiconductor island with the insulating film therebetween; 
 irradiating an impurity element serving as a donor or an acceptor into a first region of the semiconductor island, wherein the first region does not overlap with the gate electrode; 
 irradiating a second region of the semiconductor island with a Group 18 element to form a gettering site, wherein the second region is a portion of the first region; 
 heating the semiconductor island at a third temperature, wherein a metal element in the semiconductor island is diffused into the gettering site; and 
 forming a source electrode and a drain electrode over the insulating film, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       30. The method of manufacturing a semiconductor device according to  claim 29 , wherein the irradiating with the ions is performed by an ion doping apparatus. 
     
     
       31. The method of manufacturing a semiconductor device according to  claim 29 ,
 wherein the first temperature is lower than the second temperature, and 
 wherein a furnace is used as the heating apparatus. 
 
     
     
       32. The method of manufacturing a semiconductor device according to  claim 29 , wherein the second temperature is 400 ° C. or higher and 700 ° C. or lower. 
     
     
       33. The method of manufacturing a semiconductor device according to  claim 29 , wherein the third temperature is 500 ° C. or higher and 700 ° C. or lower. 
     
     
       34. A method of manufacturing a semiconductor device, comprising:
 forming a damaged region in a semiconductor substrate by irradiating the semiconductor substrate with ions included in plasma which is generated by exciting a source gas using a doping apparatus; 
 forming a bonding layer over at least one of a base substrate and the semiconductor substrate; 
 attaching the base substrate and the semiconductor substrate to each other with the bonding layer interposed therebetween; 
 dividing the semiconductor substrate at the damaged region by heating the semiconductor substrate, thereby forming a first semiconductor layer separated from the semiconductor substrate, over the base substrate by a rapid thermal annealing apparatus; 
 etching a part of the first semiconductor layer to form a second semiconductor layer; 
 forming an insulating film over the second semiconductor layer; 
 forming a gate electrode over the second semiconductor layer with the insulating film interposed therebetween; 
 etching a portion of the insulating film that does not overlap with the gate electrode; 
 forming an impurity region imparting n-type or p-type conductivity, which includes an impurity element serving as a donor or an acceptor, in a region of the second semiconductor layer that does not overlap with the gate electrode and forming a gettering site region including a Group 18 element next to the impurity region; and 
 performing heat treatment, thereby gettering a metal element in the second semiconductor layer into the gettering site region, 
 wherein the ions include H +  ions, H 2   +  ions, and H 3   +  ions, and 
 wherein the H 3   +  ions occupy 70% or more of the total amount of the H +  ions, the H 2   ±  ions, and the H 3   +  ions. 
 
     
     
       35. The method of manufacturing a semiconductor device according to  claim 34 , wherein the ions are irradiated with a dosage in a range 1 ×10 16  ions/cm 2  to 6 ×10 16  ions/cm 2 .