Composition for formation of top antireflective film, and pattern formation method using the composition

Abstract

Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R 1 , R 2 , R 3 , and R 4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X − represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.

The invention claimed is: 
     
       1. A composition for forming a top antireflective film, which comprises
 (A) at least one of fluorine-containing compounds wherein the fluorine-containing compound is a is a fluoropolymer containing a polymer unit represented by the formula (2) or a fluoropolymer containing a polymer unit represented by the formula (2) and a polymer unit represented by the formula (3):
   —[CF 2 CF(OR f COOH)]—  Formula (2)
 
 
 wherein R f  represents a linear or branched perfluoroalkylene group that may contain an ethereal oxygen atom;
   —[CF 2 CFX 1 ]—  Formula (3)
 
 
 wherein X 1  represents a fluorine atom, a chlorine atom or a hydrogen atom; and 
 (B) a quaternary ammonium compound represented by the formula (1): 
 
       
         
           
           
               
               
           
         
         wherein at least one of R 1 , R 2 , R 3  and R 4  represents a hydroxyl group or an alkanol group, the others represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and X −  represents a hydroxyl group wherein the ratio of moles of acid from the fluoropolymer to the number of moles of base from the quaternary ammonium compound is in the range of 1:0.01 to 1:1.00 and wherein a lowering of an application amount of the composition can be realized. 
       
     
     
       2. The composition for forming a top antireflective film according to  claim 1 , wherein at least one of R 1 , R 2 , R 3  and R 4  in the quaternary ammonium compound represented by the formula (1) is a hydroxyethylene group. 
     
     
       3. The composition for forming a top antireflective film according to  claim 1 , wherein the composition further comprises a fluorine-containing compound selected from a perfluoroalkylsulfonic acid, a perfluoroalkylcarboxylic acid, and perfluoroadipic acid. 
     
     
       4. The composition for forming a top antireflective film according to  claim 1 , which further comprises a water-soluble polymer. 
     
     
       5. The composition for forming a top antireflective film according to  claim 1 , which further comprises an aqueous solvent and an acid or a surfactant. 
     
     
       6. The composition for forming a top antireflective film according to  claim 5 , wherein the acid is sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, hydrogen fluoride or hydrogen bromide and the surfactant is an alkylsulfonic acid, an alkylbenzenesulfonic acid, an alkylcarboxylic acid, an alkylbenzenecarboxylic acid or compounds in which all or a part of hydrogen atoms of the alkyl group in the acids are substituted by a fluorine atom or fluorine atoms. 
     
     
       7. The composition for forming a top antireflective film according to  claim 5 , wherein the aqueous solvent is water. 
     
     
       8. A method for forming a pattern which comprises steps; applying the composition for forming an antireflective film according to  claim 1  and, wherein a lowering of an application amount of the composition can be realized.