US8569192B2ActiveUtilityPatentIndex 44

Sintered complex oxide, method for producing sintered complex oxide, sputtering target and method for producing thin film

Assignee: KURAMOCHI HIDETOPriority: Jul 15, 2008Filed: Jul 14, 2009Granted: Oct 29, 2013

Est. expiryJul 15, 2028(~2 yrs left)· nominal 20-yr term from priority

Inventors:KURAMOCHI HIDETO OMI KENJI ICHIDA MASANORI IIGUSA HITOSHI

C04B 35/64C01G 15/00C04B 2235/767C04B 2235/3244C04B 2235/80C04B 2235/5409C04B 2235/786C04B 2235/3222C04B 2235/3293C04B 2235/3286C04B 2235/77C04B 2235/3217C04B 2235/658C23C 14/086C04B 2235/3287C04B 35/453C04B 2235/3258C04B 2235/3232C04B 2235/3284C04B 2235/763C04B 2235/788C04B 2235/3239C04B 2235/3241C23C 14/3414C04B 35/62685C04B 2235/3418C23C 14/34C23C 14/08H10P 14/20

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Claims

Abstract

A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 μm, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

Claims

exact text as granted — not AI-modified

The invention claimed is: 
     
       1. A sintered complex oxide comprising:
 metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and 
 metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), 
 wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 μM, and at least 20% of the entire metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles. 
 
     
     
       2. A sintered complex oxide according to  claim 1 , wherein the maximum particle size of the metal oxide particles (b) is no greater than 10 μm. 
     
     
       3. A sintered complex oxide according to  claim 1 , wherein:
 the atomic ratio of indium with respect to the total of zinc, indium and the metal element M is 0.001-0.02, and 
 the atomic ratio of the metal element M with respect to the total is 0.005-0.05. 
 
     
     
       4. A sintered complex oxide according to  claim 1 , wherein the metal oxide particles (b) comprise ZnM 2 O 4  as the major component. 
     
     
       5. A sintered complex oxide according to  claim 1 , wherein the metal element M is aluminum. 
     
     
       6. A sputtering target comprising a sintered complex oxide according to  claim 1 .

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