Method for thin layer deposition

Abstract

The subject of the invention is a process for obtaining a material comprising a substrate and at least one at least partially crystalline titanium-oxide-based thin film deposited on a first side of said substrate, said process comprising the following steps: said at least one titanium-oxide-based thin film is deposited; said at least one titanium-oxide-based thin film is subjected to a crystallization treatment, supplying energy capable of raising each point of said at least one titanium-oxide-based thin film to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. at any point on the opposite side of said substrate to said first side; said crystallization treatment being preceded by a deposition step, in which an energy-providing film is deposited above and/or below said titanium-oxide-based thin film, said energy-providing film being capable of absorbing the energy supplied during said crystallization treatment more effectively than said at least one titanium oxide film and/or of creating additional energy during said crystallization treatment, and of transmitting at least some of said energy to said at least one titanium-oxide-based thin film during said crystallization treatment.

The invention claimed is: 
     
       1. A process for obtaining a substrate coated with a thin film of crystallized titanium oxide comprising:
 A) depositing a thin film containing titanium oxide on a side of a substrate having opposite sides, wherein said substrate comprises an energy providing film that has been applied below said thin film and/or is applied above said thin film thereby producing a substrate comprising the thin film containing titanium oxide and an energy providing film; 
 B) heating one side of the substrate comprising the thin film containing titanium oxide and an energy providing film to a temperature of at least 300° C. with a laser that emits radiation having a wavelength between 0.5 and 3 microns while maintaining a temperature not exceeding 150° C. at any point on the opposite side of the substrate under conditions allowing transmission of energy from the energy providing film to the thin film containing titanium oxide; and 
 recovering a heat-treated substrate comprising a thin film of crystallized titanium oxide. 
 
     
     
       2. The process of  claim 1 , wherein the substrate is glass. 
     
     
       3. The process of  claim 1 , wherein the thin film containing titanium oxide is applied to the substrate and then the energy providing film is deposited on top of the titanium oxide comprising thin film. 
     
     
       4. The process of  claim 1 , wherein a temperature not exceeding 100° C. is maintained at any point on the opposite side of the substrate to the side on which the thin film is deposited. 
     
     
       5. The process of  claim 1 , wherein each point on the thin film containing titanium oxide is raised to a temperature of 300° C. or higher for a time not exceeding 1 second. 
     
     
       6. The process of  claim 1 , wherein a degree of crystallization of the thin film containing titanium oxide obtained is at least 10%. 
     
     
       7. The process of  claim 1 , wherein the initial substrate has at least one dimension of 1 m or higher. 
     
     
       8. The process of  claim 1 , wherein the thin film containing titanium oxide comprises titanium oxide doped with a metallic ion or with nitrogen, carbon or fluoride atoms. 
     
     
       9. The process of  claim 1 , wherein the titanium oxide comprising thin film containing titanium oxide and the energy-providing film are deposited by sputtering. 
     
     
       10. The process of  claim 1 , wherein the energy-providing film is deposited so as to be in direct contact with the thin film containing titanium oxide. 
     
     
       11. The process of  claim 1 , wherein the energy-providing film has an absorption in a wavelength range between 0.5 to 3 microns. 
     
     
       12. The process of  claim 1 , wherein the energy-providing film emits energy by an exothermic reaction. 
     
     
       13. The process of  claim 1 , wherein the energy-providing film is at least partly evaporated by heating. 
     
     
       14. The process of  claim 1 , wherein the energy-providing film is at least partially oxidized by heating and becomes at least partially transparent in the visible range. 
     
     
       15. The process of  claim 1 , wherein the energy-providing film comprises titanium metal. 
     
     
       16. The process of  claim 1 , wherein the energy-providing film comprises carbon. 
     
     
       17. The process of  claim 1 , wherein the energy-providing film comprises silicon, optionally alloyed with aluminum. 
     
     
       18. The process of  claim 1 , wherein the energy-providing film comprises titanium carbide or silicon carbide. 
     
     
       19. The process of  claim 1 , wherein the laser emits infrared radiation. 
     
     
       20. The process of  claim 19 , wherein at least some of the infrared radiation has a wavelength range between 900 to 1100 nm. 
     
     
       21. The process of  claim 1  wherein the thin film containing titanium oxide at least partially crystallized in anatase form is obtained.