US8587007B2ActiveUtilityPatentIndex 66
Light emitting device
Est. expiryJun 29, 2030(~4 yrs left)· nominal 20-yr term from priority
H10P 14/3416H10P 14/3216H10P 14/2925H10P 14/2921H10P 14/2901H10P 14/24H10H 20/831H10H 20/825H10H 20/82H10H 20/8215H10H 20/013H10H 20/819
66
PatentIndex Score
6
Cited by
3
References
20
Claims
Abstract
The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface, and a height of the convex portion is about 1.5 μm or less.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A light emitting device comprising:
a substrate;
a plurality of convex portions protruding from a flat top surface of the substrate;
a first semiconductor layer on the substrate;
an active layer on the first semiconductor layer;
a second conductive semiconductor layer on the active layer; and
a transmissive electrode layer having a plurality of holes on the second conductive semiconductor layer, wherein each hole has a width narrower than a width of each convex portion,
wherein a circumferential surface of each convex portion includes a continuous rounded surface, and a height of the convex portion is about 1.5 μm or less,
wherein the first semiconductor layer includes a buffer layer, and the buffer layer has a thickness smaller than a height of the convex portion,
wherein the substrate has the flat top surface between the plurality of convex portions protruding more than the flat top surface, and
wherein the first semiconductor layer includes a plurality of dislocations having an interval greater than an interval between the convex portions.
2. The light emitting device of claim 1 , wherein the convex portion includes a material a same as a material of the substrate.
3. The light emitting device of claim 2 , wherein the substrate includes a sapphire material.
4. The light emitting device of claim 1 , wherein the height of the convex portion is in a range of about 0.5 μm to about 1.5 μm.
5. The light emitting device of claim 4 , wherein a width of the convex portion is in a range of about 0.5 μm to about 1.5 μm.
6. The light emitting device of claim 5 , wherein an interval between the convex portions is in a range of about 2.0 μm to about 3.0 μm.
7. The light emitting device of claim 1 , wherein the convex portion has at least one of a semispherical shape, a dome shape, and a conical shape.
8. The light emitting device of claim 1 , wherein the first semiconductor layer has a discontinuous lower surface.
9. The light emitting device of claim 1 , wherein the first semiconductor layer includes an N type semiconductor layer or a P type semiconductor layer.
10. The light emitting device of claim 1 , wherein an interval between the dislocations corresponds to an interval between vertexes of the convex portions.
11. The light emitting device of claim 1 , wherein a vertex of each convex portion is positioned higher than the buffer layer, and the buffer layer is spaced apart from the vertex of the convex portion.
12. The light emitting device of claim 1 ,
wherein a height difference of the rounded surface of the convex portion is calculated by a following equation,
Rise
(
B
)
=
R
(
Radius
)
×
(
1
-
cos
[
(
C
(
Chord
)
2
)
R
(
Radius
)
]
)
Equation
in which the R represents a radius of a circle having the rounded surface, the C represents a length of a chord of the rounded surface, and the B represents a height difference between a virtual line linking a vertex of the convex portion with a lower end of the convex portion and the rounded surface.
13. The light emitting device of claim 12 , wherein the buffer layer is interposed between the convex portions.
14. The light emitting device of claim 12 , wherein a lower surface of the first semiconductor layer includes a discontinuous surface.
15. The light emitting device of claim 1 , wherein at least one of the dislocations extends to a surface of the second conductive semiconductor layer.
16. A light emitting device comprising:
a substrate;
a plurality of convex portions protruding from a flat top surface of the substrate;
a first semiconductor layer on the substrate;
an active layer on the first semiconductor layer;
a second conductive semiconductor layer on the active layer; and
a transmissive electrode layer having a plurality of holes on the second conductive semiconductor layer, wherein each hole has a width narrower than a width of each convex portion,
wherein a circumferential surface of each convex portion includes a continuous rounded surface, and a height of the convex portion is about 1.5 μm or less.
17. The light emitting device of claim 16 , wherein the convex portion includes a material a same as a material of the substrate,
wherein the height of the convex portion is in a range of about 0.5 μm to about 1.5 μm,
wherein a width of the convex portion is in a range of about 0.5 μm to about 1.5 μm, and
wherein an interval between the convex portions is in a range of about 2.0 μm to about 3.0 μm.
18. The light emitting device of claim 16 , wherein the first semiconductor layer includes a buffer layer having a thickness smaller than a height of the convex portion, and
wherein the first semiconductor layer includes a plurality of dislocations having an interval greater than an interval between the convex portions.
19. A light emitting device comprising:
a substrate;
a plurality of convex portions protruding from a flat top surface of the substrate;
a first semiconductor layer on the substrate;
an active layer on the first semiconductor layer; and
a second conductive semiconductor layer on the active layer;
wherein a circumferential surface of each convex portion includes a continuous rounded surface, and a height of the convex portion is about 1.5 μm or less,
wherein a height difference of the rounded surface of the convex portion is calculated by a following equation,
Rise
(
B
)
=
R
(
Radius
)
×
(
1
-
cos
[
(
C
(
Chord
)
2
)
R
(
Radius
)
]
)
Equation
in which the R represents a radius of a circle having the rounded surface, the C represents a length of a chord of the rounded surface, and the B represents a height difference between a virtual line linking a vertex of the convex portion with a lower end of the convex portion and the rounded surface.
20. The light emitting device of claim 19 , wherein the first semiconductor layer includes a buffer layer having a thickness smaller than a height of the convex portion,
further comprising a plurality of dislocations in the first semiconductor layer, wherein an interval between the dislocations corresponds to an interval between the convex portions.Cited by (0)
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