US8611043B2ActiveUtilityA1

Magnetic head having polycrystalline coating

88
Assignee: BISKEBORN ROBERT GPriority: Jun 2, 2011Filed: Jun 2, 2011Granted: Dec 17, 2013
Est. expiryJun 2, 2031(~4.9 yrs left)· nominal 20-yr term from priority
G11B 5/3106G11B 5/00821Y10T428/11
88
PatentIndex Score
10
Cited by
47
References
19
Claims

Abstract

A magnetic head according to one embodiment includes a substrate; an array of transducers formed on the substrate, wherein the transducers and substrate form portions of a magnetic media facing surface; and an at least partially polycrystalline dielectric layer on the media facing surface, wherein the at least partially polycrystalline dielectric layer is on a magnetic film of at least one of the transducers in the array. A method for forming an at least partially polycrystalline dielectric layer on a media facing surface of a magnetic head according to one embodiment includes forming an at least partially polycrystalline dielectric layer on an array of transducers of a magnetic head, wherein an oxide layer is formed above at least some of the magnetic layers before and/or during the forming of the at least partially polycrystalline dielectric layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A magnetic head, comprising:
 a substrate; 
 an array of transducers formed on the substrate, wherein the transducers and substrate form portions of a magnetic media facing surface; and 
 an at least partially polycrystalline dielectric layer on the media facing surface, 
 wherein the at least partially polycrystalline dielectric layer is on a magnetic film of at least one of the transducers in the array, 
 wherein portions of the transducers adjacent the at least partially polycrystalline dielectric layer have at least one of iron oxide and reaction products of a thermite-like reaction. 
 
     
     
       2. A head as recited in  claim 1 , wherein the at least partially polycrystalline dielectric layer includes a material selected from a group consisting of oxides of aluminum and oxides of chromium. 
     
     
       3. A head as recited in  claim 1 , wherein the at least partially polycrystalline layer is present above the transducers and not above the substrate. 
     
     
       4. A head as recited in  claim 1 , wherein the at least partially polycrystalline dielectric layer has a deposition thickness of at least about 2 nm. 
     
     
       5. A head as recited in  claim 1 , wherein portions of the transducers adjacent the at least partially polycrystalline dielectric layer have the iron oxide and the reaction products of a thermite-like reaction. 
     
     
       6. A head as recited in  claim 1 , wherein the magnetic film of the at least one of the transducers include a material selected from a group consisting of sendust, Fe, and NiFe. 
     
     
       7. A data storage system, comprising:
 a magnetic head as recited in  claim 1 ; 
 a drive mechanism for passing a magnetic medium over the magnetic head; and 
 a controller electrically coupled to the magnetic head. 
 
     
     
       8. A magnetic head, comprising:
 a substrate having a media facing surface; 
 an array of transducers formed on the substrate; and 
 an at least partially polycrystalline dielectric layer above the array of transducers, 
 wherein portions of the transducers adjacent the at least partially polycrystalline dielectric layer have iron oxide and reaction products of a thermite-like reaction. 
 
     
     
       9. A head as recited in  claim 8 , wherein the at least partially polycrystalline dielectric is selected from a group consisting of oxides of aluminum and oxides of chromium. 
     
     
       10. A head as recited in  claim 8 , wherein the at least partially polycrystalline layer is present above the transducers and not above the substrate. 
     
     
       11. A head as recited in  claim 8 , wherein the at least partially polycrystalline dielectric layer has a deposition thickness of at least about 2 nm. 
     
     
       12. A head as recited in  claim 8 , wherein the transducers in the array include a magnetic film selected from a group consisting of sendust, Fe, and NiFe, wherein the at least partially polycrystalline dielectric layer is on the magnetic film. 
     
     
       13. A data storage system, comprising:
 a magnetic head as recited in  claim 8 ; 
 a drive mechanism for passing a magnetic medium over the magnetic head; and 
 a controller electrically coupled to the magnetic head. 
 
     
     
       14. A method for forming an at least partially polycrystalline dielectric layer on a media facing surface of a magnetic head, the method comprising:
 forming an at least partially polycrystalline dielectric layer on an array of transducers of a magnetic head, wherein an oxide layer is formed above at least some of the magnetic layers before and/or during the forming of the at least partially polycrystalline dielectric layer. 
 
     
     
       15. A method as recited in  claim 14 , wherein the magnetic layers of the transducers adjacent the at least partially polycrystalline dielectric layer have iron oxide and reaction products of a thermite-like reaction. 
     
     
       16. A method as recited in  claim 14 , further comprising recessing the transducers from the media facing surface of a substrate of the magnetic head prior to forming the at least partially polycrystalline dielectric layer. 
     
     
       17. A method as recited in  claim 14 , further comprising milling a substrate of the magnetic head at a grazing angle for promoting polycrystalline growth of the at least partially polycrystalline dielectric layer on the substrate. 
     
     
       18. A method as recited in  claim 14 , further comprising milling a substrate of the magnetic head at an incident angle for retarding polycrystalline growth of the at least partially polycrystalline dielectric layer on the substrate. 
     
     
       19. A method as recited in  claim 14 , wherein the magnetic layers of the transducers are oxidized to form iron oxide prior to forming the at least partially polycrystalline dielectric layer.

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