US8643573B2ExpiredUtilityPatentIndex 63
Electro-optical apparatus and method of driving the electro-optical apparatus
Est. expiryMay 19, 2023(expired)· nominal 20-yr term from priority
G09G 3/325F25D 19/00G09G 2320/043G09G 2310/0256G09G 2300/0842G09G 2330/021G09G 2310/0254G09G 2300/0861G09G 2300/043F16L 55/033G09G 2300/0809
63
PatentIndex Score
3
Cited by
32
References
20
Claims
Abstract
The invention provides an electro-optical apparatus that can prevent a shift in a threshold voltage of an amorphous silicon transistor while driving an organic EL device in a pixel circuit including the amorphous silicon transistor. A characteristic-adjustment circuit can be provided, which has a function of returning a shift in the threshold voltage of the amorphous silicon transistor included in the pixel circuit to the original state.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. An electro-optical apparatus, comprising:
a gate line;
a data line; and
a pixel circuit corresponding to intersections of the gate line and the data line,
the pixel circuit including a first transistor that is coupled between a first node and a second node, and a light-emitting element that is coupled to the first transistor through the first node, and
the first transistor being configured such that a first potential lower than a second potential of the first node is applied to a gate of the first transistor and a third potential lower than the second potential of the first node is applied to the second node of the first transistor during a first period.
2. The electro-optical apparatus according to claim 1 ,
the first transistor being configured such that the third potential of the second node is lower than the second potential of the first node during a second period.
3. The electro-optical apparatus according to claim 1 ,
the first transistor being an N-type transistor.
4. The electro-optical apparatus according to claim 3 ,
the first transistor being an amorphous silicon transistor.
5. The electro-optical apparatus according to claim 3 ,
the pixel circuit further including a capacitive element that is coupled between the first node and the gate of the first transistor.
6. The electro-optical apparatus according to claim 2 , further comprising:
a power source line,
the power source line being coupled to the first transistor through the second node during the second period, and
the pixel circuit further including a capacitive element that is coupled between the first node and the gate of the first transistor.
7. The electro-optical apparatus according to claim 2 ,
the light-emitting element not emitting light during the first period,
the first transistor being in the off-state during the second period.
8. The electro-optical apparatus according to claim 2 ,
the light-emitting element emitting light during the second period in a gray scale according to a conduction state of the first transistor set by a data signal supplied to the pixel circuit, and
the first transistor being in the off-state during the first period.
9. The electro-optical apparatus according to claim 8 ,
the data signal being supplied to the pixel circuit during a third period prior to the second period.
10. The electro-optical apparatus according to claim 3 ,
The pixel circuit further including a second transistor, and
the first voltage being supplied to the gate of the first transistor in the off-state through the second transistor.
11. An electro-optical apparatus, comprising:
a gate line;
a data line; and
a pixel circuit corresponding to intersections of the gate line and the data line,
the pixel circuit including a first transistor,
the first transistor being configured such that a gate potential lower than a source potential of a source of the first transistor is applied to a gate of the first transistor and a drain potential lower than the source potential is applied to a drain of the first transistor during a first period.
12. The electro-optical apparatus according to claim 11 ,
the first transistor being an N-type transistor.
13. The electro-optical apparatus according to claim 12 ,
the first transistor being an amorphous silicon transistor.
14. The electro-optical apparatus according to claim 12 ,
the pixel circuit further including a capacitive element that is coupled between the source and the gate of the first transistor.
15. The electro-optical apparatus according to claim 12 , further comprising:
a power source line,
the power source line being coupled to the first transistor through the drain during a second period, and
the pixel circuit further including a capacitive element that is coupled between the source and the gate of the first transistor.
16. The electro-optical apparatus according to claim 12 ,
the pixel circuits further including a light-emitting element, and
the source of the first transistor being positioned between the drain of the first transistor and the light emitting element.
17. A method for driving an electro-optical apparatus which has a pixel circuit including a driving transistor that has a first node and a second node, and a light-emitting element coupled to the driving transistor through the first node, the method comprising:
making the light-emitting element emit a light in a gray scale according to a data signal during a first period;
applying a first potential lower than a second potential of the first node to a gate of the driving transistor and applying a third potential lower than the second potential of the first node to the second node of the first transistor in a second period.
18. The method according to claim 17 ,
the driving transistor being an N-type transistor.
19. The method according to claim 18 ,
the pixel circuit further including a capacitive element that is coupled between the first node and the gate of the first transistor.
20. The method according to claim 18 , further comprising:
a power source line,
the power source line being coupled to the first transistor through the second node during a second period, and
the pixel circuit further including a capacitive element that is coupled between the first node and the gate of the first transistor.Cited by (0)
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