Nitride semiconductor laser element and method for manufacturing same

Abstract

A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from Al x Ga 1-x N (0<x≦1) and a different material from that of the insulating film.

What is claimed is: 
     
       1. A nitride semiconductor laser element comprising:
 a nitride semiconductor layer having cavity planes at ends of a waveguide region, 
 an insulating film formed on an upper face of the nitride semiconductor layer so that ends of the insulating film on cavity plane sides are isolated from the cavity planes in plan view, and 
 a first film formed from at least one of the cavity planes to an upper face of the nitride semiconductor layer, and covering part of a surface of the insulating film, 
 the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from Al x Ga 1-x N (0<x≦1) and a different material from that of the insulating film. 
 
     
     
       2. The nitride semiconductor laser element according to  claim 1 , wherein the insulating film is formed in an amorphous state. 
     
     
       3. The nitride semiconductor laser element according to  claim 2 , wherein the first region and second region within the first film are different in terms of their crystallinity or crystal state. 
     
     
       4. The nitride semiconductor laser element according to  claim 2 , wherein the first film includes single crystals in the first region, and polycrystalline or amorphous in the second region. 
     
     
       5. The nitride semiconductor laser element according to  claim 1 , wherein the first region and second region within the first film are different in terms of their crystallinity or crystal state. 
     
     
       6. The nitride semiconductor laser element according to  claim 5 , wherein the first film includes single crystals in the first region, and polycrystalline or amorphous in the second region. 
     
     
       7. The nitride semiconductor laser element according to  claim 1 , wherein the first film includes single crystals in the first region, and polycrystalline or amorphous in the second region. 
     
     
       8. The nitride semiconductor laser element according to  claim 1 , wherein the second region of the first film is thinner than the first region of the first film. 
     
     
       9. The nitride semiconductor laser element according to  claim 1 , wherein the distance away from the cavity plane of the insulating film is about 1 to 20 μm. 
     
     
       10. The nitride semiconductor laser element according to  claim 1 , wherein the insulating film includes at least one of ZrO 2 , HfO 2 , SiO 2 , Ta 2 O 5 , SiN, SiON, BN, SiC, and SiOC. 
     
     
       11. The nitride semiconductor laser element according to  claim 1 , wherein a second film is provided on a first film, and the second film is formed from material which is substantially no absorption of light of the oscillation wavelength. 
     
     
       12. The nitride semiconductor laser element according to  claim 11 , wherein the second film include at least one of SiO 2 , Al 2 O 3 , Ta 2 O 5  and HfO 2 . 
     
     
       13. The nitride semiconductor laser element according to  claim 11 , wherein the second film is formed in an amorphous state. 
     
     
       14. The nitride semiconductor laser element according to  claim 11 , wherein the total thickness of the end face protective film on the reflecting side is 900 nm or less. 
     
     
       15. The nitride semiconductor laser element according to  claim 11 , wherein a third film is formed for protecting the second film on the second film.