Multilayered infrared light reflective structure

Abstract

The invention provides a multilayered infrared light reflective structure. The multilayered infrared light reflective structure includes a transparent substrate. A doped oxide film is disposed on the transparent substrate. An oxide isolated layer is disposed on the doped oxide film, thereby allowing incident light to be incident from a top surface of the transparent substrate into the multilayered infrared light reflective structure.

What is claimed is: 
     
       1. A multilayered infrared light reflective structure, comprising:
 a transparent substrate; 
 a doped oxide film disposed on the transparent substrate, wherein the doped oxide film comprises a lithium and fluorine co-doped tin oxide (Li—F:SnO 2 ) film or a gallium-doped zinc oxide (Ga:ZnO 2 ) film; 
 an oxide isolated layer disposed on the doped oxide film, thereby allowing incident light to be incident from a top surface of the transparent substrate into the multilayered infrared light reflective structure, wherein the oxide isolated layer comprises a tungsten oxide (WO 3-x ) layer; 
 an oxide distributed Bragg reflector film sandwiched between the doped oxide film and the oxide isolated layer, wherein the oxide distributed Bragg reflector film is formed by laminating a plurality of pairs of oxide films, and wherein each of the pairs of oxide films comprises a lower TiO 2  film and an upper SiO 2  film. 
 
     
     
       2. The multilayered infrared light reflective structure as claimed in  claim 1 , wherein the doped oxide film has a thickness which is smaller than 2 μm. 
     
     
       3. The multilayered infrared light reflective structure as claimed in  claim 1 , wherein the oxide distributed Bragg reflector film comprises two to ten pairs of oxide films. 
     
     
       4. The multilayered infrared light reflective structure as claimed in  claim 1 , wherein the TiO 2  film has a thickness of between 50 nm and 250 nm. 
     
     
       5. The multilayered infrared light reflective structure as claimed in  claim 1 , wherein the SiO 2  film has a thickness of between 50 nm and 250 nm. 
     
     
       6. The multilayered infrared light reflective structure as claimed in  claim 1 , wherein the oxide isolated layer has a thickness of between about 100 nm and 5000 nm. 
     
     
       7. The multilayered infrared light reflective structure as claimed in  claim 1 , wherein the tungsten oxide (WO 3-x ) layer has a thickness of between about 2000 nm and 3000 nm.