Process and apparatuses for preparing ultrapure silicon

Abstract

A process for preparing high-purity silicon by thermal decomposition of a silicon compound includes decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed.

The invention claimed is: 
     
       1. A process of preparing high-purity silicon by thermal decomposition of a silicon compound comprising decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed, wherein energy required for decomposition of the silicon compound is exclusively provided via the carrier gas. 
     
     
       2. A process of preparing high-purity silicon by thermal decomposition of a silicon compound comprising decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed, wherein the carrier gas, before being mixed with the silicon compound, is heated in a plasma generator. 
     
     
       3. A process of preparing high-purity silicon by thermal decomposition of a silicon compound comprising:
 (a) decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed, wherein a mixture comprising the silicon compound, the carrier gas, silicon vapor and gaseous decomposition products is obtained, and 
 (b) passing the mixture into a reactor, where the silicon vapor is condensed. 
 
     
     
       4. The process according to  claim 3 , wherein the mixture is introduced into the reactor at a flow rate of 200 m/sec to 400 m/sec.