High energy-density radioisotope micro power sources

Abstract

A method of constructing a solid-state energy-density micro radioisotope power source device. In such embodiments, the method comprises depositing the pre-voltaic semiconductor composition, comprising a semiconductor material and a radioisotope material, into a micro chamber formed within a power source device body. The method additionally includes heating the body to a temperature at which the pre-voltaic semiconductor composition will liquefy within the micro chamber to provide a liquid state composite mixture. Furthermore, the method includes cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide a solid-state composite voltaic semiconductor, thereby providing a solid-state high energy-density micro radioisotope power source device.

What is claimed is: 
     
       1. A method of constructing an amorphous solid-state high energy-density micro radioisotope power source device; said method comprising:
 directly mixing at least one semiconductor material with at least one radioisotope material to provide a pre-voltaic semiconductor mixture; 
 subsequently depositing the pre-voltaic semiconductor mixture into a micro chamber formed in a bottom portion of a high energy-density micro radioisotope power source device, the bottom portion of the high energy-density micro radioisotope power source device including a first electrode disposed in a bottom of the micro chamber; 
 subsequently disposing a top portion of the high energy-density micro radioisotope power source device onto the bottom portion of the high energy-density micro radioisotope power source device, covering the micro chamber, to provide an assembled body of the high energy-density micro radioisotope power source device, the top portion of the high energy-density micro radioisotope power source device including a second electrode disposed at a top of the micro chamber; 
 subsequently heating the assembled body to a temperature at which the pre-voltaic semiconductor mixture will liquefy within the micro chamber such that atoms of the at least one semiconductor material will chemically bind with atoms of the at least one radioisotope material and provide a liquid state composite; and 
 subsequently cooling the assembled body and liquid state composite such that liquid state composite solidifies to provide a solid-state composite voltaic semiconductor, and thereby providing a solid-state high energy-density micro radioisotope power source device. 
 
     
     
       2. The method of  claim 1 , further comprising combining at least one dopant with the at least one semiconductor material with the at least one radioisotope material to provide the pre-voltaic semiconductor mixture. 
     
     
       3. The method of  claim 2 , wherein heating the assembled body comprises heating the assembled body to a temperature at which the pre-voltaic semiconductor mixture will liquefy such that the at least one semiconductor material, at least one radioisotope material, and at least one dopant are thoroughly and uniformly mixed to provide a liquid state composite. 
     
     
       4. The method of  claim 1 , further comprising applying a compression bonding process to the assembled body as the assembled body is heated to a temperature at which the pre-voltaic semiconductor mixture will liquefy to form a ‘leak-proof’ seal between the top and bottom portions of the high energy-density micro radioisotope power source device. 
     
     
       5. The method of  claim 1 , further comprising providing nanostructures on an interface surface of at least one of the first and second electrodes to increase a surface per volume ratio of the solid-state composite voltaic semiconductor to at least one of the first and second electrodes, resulting in higher conversion efficiency of the solid-state high energy-density micro radioisotope power source device. 
     
     
       6. The method of  claim 1 , further comprising:
 structuring the first electrode to include comb-like fingers extending from a base of the first electrode; and 
 structuring the second electrode to include comb-like fingers extending from a base of the second electrode such that the first electrode comb-like fingers are interposed with the second electrode comb-like fingers and a gap is provided between the interposed first and second electrode comb-like fingers in which the solid-state composite voltaic semiconductor is disposed such that a surface per volume ratio of the solid-state composite voltaic semiconductor to the first and second electrodes is increased, resulting in higher conversion efficiency of the solid-state high energy-density micro radioisotope power source device. 
 
     
     
       7. The method of  claim 1 , wherein the solid-state high energy-density micro radioisotope power source device comprising the solidified composite is operational to provide electrical voltage at least at temperatures between 0° C. and 300° C. without altering the material composition of the solidified composite. 
     
     
       8. A method of constructing an amorphous solid-state high energy-density micro radioisotope power source device; said method comprising:
 directly mixing at least one semiconductor material with at least one radioisotope material and at least one dopant to provide a pre-voltaic semiconductor mixture; 
 subsequently depositing the pre-voltaic semiconductor mixture into a micro chamber formed in a bottom portion of a high energy-density micro radioisotope power source device, the bottom portion of the high energy-density micro radioisotope power source device including a first electrode disposed in a bottom of the micro chamber; 
 subsequently disposing a top portion of the high energy-density micro radioisotope power source device onto the bottom portion of the high energy-density micro radioisotope power source device, covering the micro chamber, to provide an assembled body of the high energy-density micro radioisotope power source device, the top portion of the high energy-density micro radioisotope power source device including a second electrode disposed at a top of the micro chamber; 
 subsequently heating the assembled body to a temperature at which the pre-voltaic semiconductor mixture will liquefy within the micro chamber such that atoms of the at least one semiconductor material will chemically bind with atoms of the at least one radioisotope material and at least one dopant to provide a liquid state composite; 
 applying a compression bonding process to the heated assembled body to form a ‘leak-proof’ seal between the top and bottom portions of the high energy-density micro radioisotope power source device; and 
 subsequently cooling the assembled body and liquid state composite such that liquid state composite solidifies to provide a solid-state composite voltaic semiconductor, and thereby providing a solid-state high energy-density micro radioisotope power source device. 
 
     
     
       9. The method of  claim 8 , further comprising providing nanostructures on an interface surface of at least one of the first and second electrodes to increase a surface per volume ratio of the solid-state composite voltaic semiconductor to at least one of the first and second electrodes, resulting in higher conversion efficiency of the solid-state high energy-density micro radioisotope power source device. 
     
     
       10. The method of  claim 8 , further comprising:
 structuring the first electrode to include comb-like fingers extending from a base of the first electrode; and 
 structuring the second electrode to include comb-like fingers extending from a base of the second electrode such that the first electrode comb-like fingers are interposed with the second electrode comb-like fingers and a gap is provided between the interposed first and second electrode comb-like fingers in which the solid-state composite voltaic semiconductor is disposed such that a surface per volume ratio of the solid-state composite voltaic semiconductor to the first and second electrodes is increased, resulting in higher conversion efficiency of the solid-state high energy-density micro radioisotope power source device. 
 
     
     
       11. The method of  claim 8 , wherein the solid-state high energy-density micro radioisotope power source device comprising the solidified composite is operational to provide electrical voltage at least at temperatures between 0° C. and 300° C. without altering the material composition of the solidified composite.