Solid-state imaging device, method of manufacturing solid-state imaging device, and imaging apparatus

Abstract

There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.

What is claimed is: 
     
       1. A solid-state imaging device comprising:
 a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; 
 a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and 
 a second film which is formed on the optical black region and in which at least one layer or more of layers having a negative fixed charge are laminated, 
 wherein the number of layers formed in the first film is different from the number of layers formed in the second film. 
 
     
     
       2. The solid-state imaging device according to  claim 1 ,
 wherein the first film includes, 
 a first layer that is formed on the semiconductor substrate using an atomic layer vapor deposition method or a metal organic chemical vapor deposition method, 
 a second layer that is formed on the first layer using the atomic layer vapor deposition method or the metal organic chemical vapor deposition method, and 
 a third layer that is formed on the second layer using a physical vapor deposition, and 
 wherein the second film includes, 
 a first layer that is formed on the semiconductor substrate using the atomic layer vapor deposition method or the metal organic chemical vapor deposition method, and 
 a second layer that is formed on the first layer using the physical vapor deposition. 
 
     
     
       3. The solid-state imaging device according to  claim 1 ,
 wherein the first film includes, 
 a first layer that is formed on the semiconductor substrate using an atomic layer vapor deposition method or a metal organic chemical vapor deposition method, and 
 a second layer that is formed on the first layer using a physical vapor deposition, and 
 wherein the second film includes, 
 a first layer that is formed on the semiconductor substrate using the atomic layer vapor deposition method or the metal organic chemical vapor deposition method, 
 a second layer that is formed on the first layer using the physical vapor deposition, and 
 a third layer that is formed on the second layer using the atomic layer vapor deposition method or the metal organic chemical vapor deposition method. 
 
     
     
       4. The solid-state imaging device according to  claim 1 ,
 wherein the first film includes, 
 a first layer that is formed on the semiconductor substrate using an atomic layer vapor deposition method or a metal organic chemical vapor deposition method, 
 a second layer that is formed on the first layer using a physical vapor deposition, and 
 a third layer that is formed on the second layer using the atomic layer vapor deposition method or the metal organic chemical vapor deposition method, and 
 wherein the second film includes, 
 a first layer that is formed on the semiconductor substrate using the atomic layer vapor deposition method or the metal organic chemical vapor deposition method. 
 
     
     
       5. The solid-state imaging device according to  claim 1 ,
 wherein the layers making up the first film and the second film are formed of any one of a hafnium oxide film, an aluminum oxide film, a zirconium oxide film, a tantalum oxide film, and a titanium oxide film. 
 
     
     
       6. An imaging apparatus comprising:
 the solid-state imaging device according to  claim 1 ; 
 an optical system that images an image of a subject on the solid-state imaging device; 
 a driving unit that generates a driving pulse that allows the solid-state imaging device to operate; and 
 a signal processing circuit that processes an output image signal from the solid-state imaging device. 
 
     
     
       7. A method of manufacturing a solid-state imaging device, the method comprising:
 forming an effective region in which a photodiode performing a photoelectric conversion is formed, and an optical black region shielded by a light shielding film in a semiconductor substrate; 
 forming a first film, in which at least one layer or more of layers having a negative fixed charge are laminated, on the effective region; and 
 forming a second film, in which at least one layer or more of layers having a negative fixed charge are laminated and the number of layers is different from the number of layers formed in the first film, on the optical black region.