Structured wafer for device processing

Abstract

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

What is claimed is: 
     
       1. An apparatus comprising:
 a structured water that comprises through passages; and 
 a device layer bonded to a top surface of the structured wafer via a release layer, wherein the device layer comprises a plurality of devices, 
 wherein each of the through passages extends from or along one surface of the structured wafer and to the top surface, wherein the through passages do not define side edges of the structured wafer that extend from the top surface to the one surface of the structured wafer. 
 
     
     
       2. The apparatus of  claim 1 , wherein each of the through passages comprises a through hole that extends vertically through the thickness of the structured wafer. 
     
     
       3. The apparatus of  claim 1 , wherein each of the through passages comprises a surface channel that lies across the top surface of the structured wafer and extends lengthwise on the one surface of the structured wafer. 
     
     
       4. The apparatus of  claim 1 , wherein the through passages comprises a combination of through holes and surface channels, wherein each of the through holes extends vertically through the thickness of the structured wafer and each of the surface channels extends lengthwise on the one surface of the structured wafer. 
     
     
       5. The apparatus of  claim 1 , wherein in the plurality of devices, at least one of the devices being one or more of the following: a detector, a sensor, a photovoltaic cell, an integrated circuit, a micro-machine part, a micro-mechanical part, or an electronic component. 
     
     
       6. The apparatus of  claim 1 , further comprising:
 a first passivation layer formed on surfaces of each of the plurality of devices; and 
 a second passivation layer formed on outer surfaces of the structured wafer and inner surfaces of the through passages. 
 
     
     
       7. The apparatus of  claim 1 , wherein the structured wafer is reusable for producing additional plurality of devices. 
     
     
       8. The apparatus of  claim 1 , wherein at least two of the devices being different from each other. 
     
     
       9. A system comprising:
 a structured wafer that comprises through passages; and 
 a donor wafer different than the structured wafer, the donor wafer bonded to a top surface of the structured wafer, the donor wafer comprising to device layer, 
 wherein each of the through passages of the structured wafer extends from or along one surface of the structured wafer and to the top surface of the structured wafer, wherein the through passages do not define side edges of the structured wafer that extend from the top surface to the one surface of the structured wafer. 
 
     
     
       10. The system of  claim 9 , wherein each of the through passages comprises a through hole that extends vertically through the thickness of the structured wafer. 
     
     
       11. The system of  claim 9 , wherein each of the through passages comprises a surface channel that lies across the top surface of the structured wafer and extends lengthwise on the one surface of the structured wafer. 
     
     
       12. The system of  claim 9 , wherein the through passages comprises a combination of a through holes and surface channels, wherein each of the through holes extends vertically through the thickness of the structured wafer and each of the surface channels extends lengthwise on the one surface of the structured wafer. 
     
     
       13. An apparatus comprising:
 a structured wafer that comprises through passages; 
 a device layer bonded to a top surface of the structured wafer via a release layer, wherein each of the through passages extends from or along one surface of the structured wafer and to the top surface, wherein the through passages do not define side edges of the structured wafer that extend from the top surface to the one surface of the structured wafer; 
 a first passivation layer formed on surfaces of the device layer; and 
 a second passivation layer formed on outer surfaces of the structured wafer and inner surfaces of the through passages.