X-ray detection device

Abstract

An X-ray detection device includes a gate electrode and a lower electrode on a substrate and laterally spaced from each other, a dielectric layer covering the gate electrode and the lower electrode, and a conductive pattern on the dielectric layer at a side of the gate electrode adjacent to the lower electrode and overlapping the lower electrode. The device also includes a source electrode spaced apart from the conductive pattern that is on the dielectric layer at the other side of the gate electrode, and an interlayer insulation layer covering the conductive pattern and the source electrode. A collector electrode, a photoelectric conversion layer, and a bias electrode are sequentially stacked on the interlayer insulation layer.

What is claimed is: 
     
       1. An X-ray detection device, comprising:
 a gate electrode and a lower electrode on a substrate and laterally spaced from each other; 
 a dielectric layer covering the gate electrode and the lower electrode; 
 a conductive pattern on the dielectric layer at a side of the gate electrode adjacent to the lower electrode, the conductive pattern extending on the dielectric layer to overlap with the lower electrode; 
 a source electrode on the dielectric layer at the other side of the gate electrode, the source electrode being spaced apart from the conductive pattern; 
 an interlayer insulation layer covering the conductive pattern and the source electrode; and 
 a collector electrode, a photoelectric conversion layer, and a bias electrode sequentially stacked on the interlayer insulation layer, wherein the photoelectric conversion layer includes copper (Cu), indium (In), gallium (Ga), and selenium (Se). 
 
     
     
       2. The X-ray detection device of  claim 1 , wherein the interlayer insulation layer includes a hole exposing a part of the conductive pattern, the collector electrode being substantially conformally formed on a bottom surface and sidewalls of the hole to define a space surrounded by the collector electrode in the hole. 
     
     
       3. The X-ray detection device of  claim 2 , wherein the photoelectric conversion layer fills the space surrounded by the collector electrode. 
     
     
       4. The X-ray detection device of  claim 1 , wherein:
 the interlayer insulation layer includes a hole exposing the conductive pattern, and 
 the X-ray detection device includes a conductive adhesive material filled in the hole. 
 
     
     
       5. The X-ray detection device of  claim 1 , further comprising:
 a gate line extending in a first direction on the substrate, the gate electrode being a portion of the gate line that is protruded from the gate line; and 
 a data line extending in a second direction perpendicular to the first direction on the substrate, the source electrode being a portion of the data line that is protruded from the data line. 
 
     
     
       6. An X-ray detection device, comprising:
 a transistor and a capacitor on a substrate and laterally spaced from each other; 
 a collector electrode on the capacitor; and 
 a photoelectric conversion layer including CuIn x Ga (1-x) Se 2  (0<x<1) on the collector electrode; 
 wherein the photoelectric conversion layer includes about 20 to about 30 at % of copper (Cu), about 20 to about 30 at % of In x Ga (1-x) , and about 45 to about 55 at % of selenium (Se). 
 
     
     
       7. The X-ray detection device of  claim 6 , wherein a density of the photoelectric conversion layer is about 3.71 g/cm 3  to about 7.71 g/cm 3 . 
     
     
       8. The X-ray detection device of  claim 6 , wherein:
 the transistor includes a gate electrode on the substrate, a gate insulation layer on the gate electrode, a semiconductor pattern overlapped with the gate insulation layer, and source and drain electrodes on the semiconductor pattern at both sides of the gate electrode; and 
 the capacitor includes a lower electrode on the substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. 
 
     
     
       9. The X-ray detection device of  claim 8 , wherein the gate insulation layer and the capacitor dielectric layer are formed of a same material and provided during a same process. 
     
     
       10. The X-ray detection device of  claim 8 , wherein the source and drain electrodes and the upper electrode are formed of a same material and are provided during a same process. 
     
     
       11. The X-ray detection device of  claim 8 , wherein bottom surfaces of the gate electrode and the lower electrode are on the same level, the gate electrode and the lower electrode including different materials. 
     
     
       12. The X-ray detection device of  claim 8 , wherein the lower electrode and the collector electrode include a transparent conductive material. 
     
     
       13. The X-ray detection device of  claim 6 , further comprising a bias electrode on the photoelectric conversion layer, a voltage applied to the bias electrode being higher than a voltage applied to the collector electrode. 
     
     
       14. The X-ray detection device of  claim 13 , further comprising a buffer layer between the photoelectric conversion layer and the bias electrode, the buffer layer including a material different from the photoelectric conversion layer and the bias electrode. 
     
     
       15. The X-ray detection device of  claim 6 , wherein a thickness of the photoelectric conversion layer is about 50 μm to about 200 μm. 
     
     
       16. The X-ray detection device of  claim 6 , wherein a thickness of the photoelectric conversion layer is about 500 μm to about 2000 μm.