US8766659B2ActiveUtilityA1

Contactor including a covalent bond layer

Assignee: MARUYAMA SHIGEYUKIPriority: Feb 26, 2010Filed: Feb 24, 2011Granted: Jul 1, 2014
Est. expiryFeb 26, 2030(~3.6 yrs left)· nominal 20-yr term from priority
G01R 1/06761
33
PatentIndex Score
0
Cited by
6
References
7
Claims

Abstract

A contactor includes a contactor base material including a first material and a conductor film including a second material. The conductor film is formed only on a contact surface with an electrode of a semiconductor apparatus at a tip of the contactor film.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A contactor, comprising:
 a contactor base material including a first material; 
 a conductor film formed at a contact surface of a tip of the contactor base material, the conductor film including a second material; 
 a thin film formed between the surface of the contactor base material and the conductor film, the thin film including a third material; and 
 a covalent bond layer formed in an interface between the conductor film and the thin film, the covalent bond layer is formed through a covalent bond of the second material and the third material, 
 a difference between a covalent radius of the second material and a covalent radius of the third material is less than a difference between the covalent radius of the second material and a covalent radius of the first material. 
 
     
     
       2. The contactor according to  claim 1 ,
 wherein the third material includes nickel or an alloy of nickel and gold. 
 
     
     
       3. The contactor according to  claim 1 , wherein
 the second material and the third material are substantially identical. 
 
     
     
       4. The contactor according to  claim 1 , wherein
 the second material includes gold, platinum, nickel, palladium, or palladium-cobalt alloys. 
 
     
     
       5. The contactor according to  claim 4 , wherein
 an electrode of a semiconductor apparatus to come in contact with the contact surface includes aluminum, tin, or lead. 
 
     
     
       6. The contactor according to  claim 1 , wherein
 the second material differs from the material included in an electrode of a semiconductor apparatus to come in contact with the contact surface. 
 
     
     
       7. The contactor according to  claim 1 , wherein the first material includes copper, iron, a beryllium copper alloy or tungsten.

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