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US8778463B2ActiveUtilityPatentIndex 46

Method for manufacturing the color controlled sapphire

Assignee: PARK JAE-WONPriority: Jun 12, 2008Filed: Jun 12, 2008Granted: Jul 15, 2014
Est. expiryJun 12, 2028(~1.9 yrs left)· nominal 20-yr term from priority
Inventors:PARK JAE WONAHN JU-HYUNGKIM YOUNG-CHOOLHAN JANG-MINKIM JUNYEON
C30B 31/22C30B 33/02C30B 29/20
46
PatentIndex Score
3
Cited by
15
References
2
Claims

Abstract

Disclosed herein is a method of manufacturing a color-controlled sapphire, comprising: vaporizing a metal material, irradiating the vaporized metal material with electron beams or high-frequency waves to form the vaporized metal material into a plasma state, and then implanting the metal ions into a sapphire by extracting the metal ions from the plasma and accelerating the metal ions (step 1); and heat-treating the sapphire implanted with the metal plasma ions in an oxygen atmosphere or in air (step 2). According to the method of manufacturing a sapphire of the present invention, a sapphire, which can exhibit various colors, can be manufactured by implanting the ions, which can cause optical band gap changes into the sapphire, and a sapphire, which cannot be damaged by radiation and can exhibit colors uniformly, can be manufactured by conducting heat treatment under an oxygen atmosphere. Further, according to the present invention, a sapphire, which cannot be damaged by radiation and can be made to exhibit uniform colors, can be manufactured by performing the above processes repeatedly.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A method of manufacturing a color-controlled sapphire, comprising steps of:
 (1) vaporizing chromium through sputtering or heating; 
 (2) irradiating the vaporized chromium with electron beams or high-frequency waves to form the vaporized chromium into a plasma state having chromium ions formed from the vaporized chromium; 
 (3) extracting the chromium ions from the plasma; 
 (4) accelerating the chromium ions; 
 (5) implanting the chromium ions into a sapphire; 
 (6) heat-treating the sapphire implanted with the chromium ions at a temperature of 900˜1400° C. for 2˜36 hours in an oxygen atmosphere or in air; and 
 (7) cooling the sapphire, 
 wherein, in the step of implanting, energy of the chromium ions to be implanted is 50 keV˜1000 keV, and the chromium ions are implanted into the sapphire in an amount of 1×10 15 ˜5×10 17 ions/cm 2 , and 
 wherein a color imparted by implantation of the chromium ions in the sapphire is stable following heat-treating at 900˜1400° C. for 2˜36 hours. 
 
     
     
       2. The method of manufacturing a color-controlled sapphire according to  claim 1 , wherein steps of vaporizing to heat-treating are conducted 1-10 times.

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