US8815125B2ActiveUtilityA1

Method of manufacturing a resistor paste

Assignee: OGATA YUKOPriority: Jun 20, 2012Filed: Jun 20, 2012Granted: Aug 26, 2014
Est. expiryJun 20, 2032(~5.8 yrs left)· nominal 20-yr term from priority
Inventors:Yuko Ogata
Y10T428/31678H01B 1/22Y10T428/24917
63
PatentIndex Score
5
Cited by
5
References
9
Claims

Abstract

A method of manufacturing a resistor paste comprising steps of: (a) preparing a basic resistor paste comprising, (i) a conductive powder, (ii) a first glass frit, and (iii) a first organic medium; and (b) preparing a glass paste as a TCR driver comprising, (iv) a second glass frit comprising manganese oxide, and (v) a second organic medium, (c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method of manufacturing a resistor paste comprising steps of:
 (a) preparing a basic resistor paste comprising
 (i) a conductive powder, 
 (ii) a first glass frit, and 
 (iii) a first organic medium; 
 
 (b) preparing a glass paste as a TCR driver comprising,
 (iv) a second glass frit comprising manganese oxide, and 
 (v) a second organic medium; and 
 
 (c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR. 
 
     
     
       2. The method of manufacturing a resistor paste of  claim 1 , wherein the manganese oxide is 3 to 69 weight percent, based on the weight of the second glass frit. 
     
     
       3. The method of manufacturing a resistor paste of  claim 1 , wherein the second glass frit further comprises SiO 2 , B 2 O 3 , Al 2 O 3  or a mixture thereof. 
     
     
       4. The method of manufacturing a resistor paste of  claim 1 , wherein the second glass frit is 10 to 60 wt % based on the weight of the glass paste. 
     
     
       5. The method of manufacturing a resistor paste of  claim 1 , wherein the glass paste further comprises a third glass frit with softening point of 700 to 950° C. 
     
     
       6. The method of manufacturing a resistor paste of  claim 5 , wherein the third glass frit is an alkali earth-silicate glass frit comprising a metal oxide selected from the group consisting of silicon oxide (SiO 2 ), calcium oxide (CaO), boron oxide (B 2 O 3 ), barium oxide (BaO) and a mixture thereof. 
     
     
       7. The method of manufacturing a resistor paste of  claim 1 , wherein the conductive powder comprises ruthenium pyrochlore oxide, a ruthenium oxide, silver, palladium, copper, carbon, or a mixture thereof. 
     
     
       8. A method of manufacturing a thick-film chip resistor, comprising:
 applying on a substrate a resistor paste prepared according to  claim 1 ; and 
 firing the resistor paste to obtain a thick-film chip resistor. 
 
     
     
       9. A thick-film chip resistor made by the method of  claim 8 .

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