US8815125B2ActiveUtilityA1
Method of manufacturing a resistor paste
Est. expiryJun 20, 2032(~5.8 yrs left)· nominal 20-yr term from priority
Inventors:Yuko Ogata
Y10T428/31678H01B 1/22Y10T428/24917
63
PatentIndex Score
5
Cited by
5
References
9
Claims
Abstract
A method of manufacturing a resistor paste comprising steps of: (a) preparing a basic resistor paste comprising, (i) a conductive powder, (ii) a first glass frit, and (iii) a first organic medium; and (b) preparing a glass paste as a TCR driver comprising, (iv) a second glass frit comprising manganese oxide, and (v) a second organic medium, (c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method of manufacturing a resistor paste comprising steps of:
(a) preparing a basic resistor paste comprising
(i) a conductive powder,
(ii) a first glass frit, and
(iii) a first organic medium;
(b) preparing a glass paste as a TCR driver comprising,
(iv) a second glass frit comprising manganese oxide, and
(v) a second organic medium; and
(c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.
2. The method of manufacturing a resistor paste of claim 1 , wherein the manganese oxide is 3 to 69 weight percent, based on the weight of the second glass frit.
3. The method of manufacturing a resistor paste of claim 1 , wherein the second glass frit further comprises SiO 2 , B 2 O 3 , Al 2 O 3 or a mixture thereof.
4. The method of manufacturing a resistor paste of claim 1 , wherein the second glass frit is 10 to 60 wt % based on the weight of the glass paste.
5. The method of manufacturing a resistor paste of claim 1 , wherein the glass paste further comprises a third glass frit with softening point of 700 to 950° C.
6. The method of manufacturing a resistor paste of claim 5 , wherein the third glass frit is an alkali earth-silicate glass frit comprising a metal oxide selected from the group consisting of silicon oxide (SiO 2 ), calcium oxide (CaO), boron oxide (B 2 O 3 ), barium oxide (BaO) and a mixture thereof.
7. The method of manufacturing a resistor paste of claim 1 , wherein the conductive powder comprises ruthenium pyrochlore oxide, a ruthenium oxide, silver, palladium, copper, carbon, or a mixture thereof.
8. A method of manufacturing a thick-film chip resistor, comprising:
applying on a substrate a resistor paste prepared according to claim 1 ; and
firing the resistor paste to obtain a thick-film chip resistor.
9. A thick-film chip resistor made by the method of claim 8 .Join the waitlist — get patent alerts
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