Method for fabricating infrared sensors

Abstract

A method for fabricating infrared sensors is disclosed. a chalcogenide layer is initially deposited on a substrate. A group of vias is then formed within the chalcogenide layer. After the vias have been converted to a group of studs, a vanadium oxide layer is deposited on the chalcogenide layer covering the studs. Next, the vanadium oxide layer is separated into multiple vanadium oxide membranes. After the chalcogenide layer has been removed, each of the vanadium oxide membranes is allowed to be freestanding while only supported by a corresponding one of the studs. The vanadium oxide membranes will be used as infrared sensors.

What is claimed is: 
     
       1. A method for manufacturing an optical sensor, said method comprising:
 depositing a chalcogenide layer on a substrate; 
 forming a plurality of vias within said chalcogenide layer; 
 converting said plurality of vias to a plurality of studs; 
 depositing a vanadium oxide layer on said chalcogenide layer and said plurality of studs; 
 separating said vanadium oxide layer into a plurality of vanadium oxide membranes; and 
 removing said chalcogenide layer to allow each of said plurality of vanadium oxide membranes to be freestanding while only supported by a corresponding one of said studs. 
 
     
     
       2. The method of  claim 1 , wherein said chalcogenide layer is deposited on said substrate via a plasma vapor deposition. 
     
     
       3. The method of  claim 1 , wherein said plurality of vias are filled with tungsten to form said plurality of studs. 
     
     
       4. The method of  claim 1 , wherein said chalcogenide layer is removed by exposing said substrate to CF 4  down stream plasma. 
     
     
       5. The method of  claim 1 , wherein said substrate is completed with a plurality of electrical devices. 
     
     
       6. The method of  claim 1 , wherein said chalcogenide layer is made of Ge 2 Sb 2 Te 5 .