Semiconductor package and method for manufacturing the same

Abstract

A semiconductor package includes a semiconductor chip having a first surface, on which an electrode pad is arranged, and a second surface which is the other side of the semiconductor chip, an insulation member formed on the second surface of the semiconductor chip, and comprising a via hole at a position spaced apart from the semiconductor chip, and a conductive filler filling the via hole.

What is claimed is: 
     
       1. A method for manufacturing a semiconductor package, comprising:
 filling a mold with an insulation member solution, the mold comprising a protruding bar within a cavity; 
 immersing a second surface of a semiconductor chip into the insulation member solution, wherein the semiconductor chip has a first surface on which an electrode pad is arranged, and the second surface which is the other side of the semiconductor chip; 
 separating the semiconductor chip and an insulation member attached thereto from the mold; and 
 filling a via hole of the insulation member, which is formed by the protruding bar, with a conductive filler. 
 
     
     
       2. The method of  claim 1 , wherein the insulation member solution comprises an epoxy resin. 
     
     
       3. The method of  claim 2 , wherein the insulation member solution further comprises a curing agent and a curing accelerator. 
     
     
       4. The member of  claim 2 , wherein the insulation member solution further comprises a filler. 
     
     
       5. The method of  claim 4 , wherein the filler comprises one or more inorganic fillers selected from the group consisting of talc, sand, silica, calcium carbonate, mica, quartz, glass fiber, graphite, alumina, antimony oxide, barium titanate, and bentonite. 
     
     
       6. The method of  claim 1 , wherein the conductive filler comprises one or more materials selected from the group consisting of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), tungsten (W), titanium (Ti), platinum (Pt), palladium (Pd), tin (Sn), lead (Pb), zinc (Zn), indium (In), cadmium (Cd), chrome (Cr), molybdenum (Mo), and an alloy thereof. 
     
     
       7. The method of  claim 1 , wherein the via hole of the insulation member is filled with the conductive filler by at least one method selected from the group consisting of a vacuum evaporation, a sputtering, a chemical vapor deposition, an electroless plating, a paste injection, a screen printing, and an inkjet spraying. 
     
     
       8. The method of  claim 1 , further comprising curing the insulation member solution before the semiconductor chip and the insulation member attached thereto are separated from the mold. 
     
     
       9. The method of  claim 8 , wherein the insulation member solution is cured by a thermal curing process or an ultraviolet curing process. 
     
     
       10. The method of  claim 1 , further comprising forming a contact pad at an end or both ends of the conductive filler after the via hole of the insulation member, which is formed by the protruding bar, is filled with the conductive filler. 
     
     
       11. The method of  claim 10 , wherein the contact pad comprises one or more materials selected from the group consisting of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), tungsten (W), titanium (Ti), platinum (Pt), palladium (Pd), tin (Sn), lead (Pb), zinc (Zn), indium (In), cadmium (Cd), chrome (Cr), molybdenum (Mo), and an alloy thereof. 
     
     
       12. The method of  claim 10 , further comprising:
 coupling the contact pad and the electrode pad of the semiconductor chip by a bonding wire after the via hole of the insulation member, which is formed by the protruding bar, is filled with the conductive filler; and 
 mounting a solder ball on the contact pad.