US8847259B2ActiveUtilityPatentIndex 52
Light emitting device package
Est. expiryDec 29, 2028(~2.5 yrs left)· nominal 20-yr term from priority
Inventors:KIM GEUN HO
H10W 90/734H10W 72/884H10W 70/682H10H 20/857H10H 20/8582H01L 2224/48091H01L 33/642H01L 2224/73265H01L 2924/00014H01L 2924/10253H01L 33/62H01L 2924/00
52
PatentIndex Score
0
Cited by
26
References
19
Claims
Abstract
A light emitting device package and a method for manufacturing the same are provided. The light emitting device package comprises a package body comprising a cavity at an upper portion; a first and second metal layers on the cavity of the package body; an open area recessed in the cavity; a first metal plate disposed in the open area and spaced apart from the first and second metal layers; a semiconductor device disposed on the first metal plate and electrically connected to at least one of the first and the second metal layers; and a resin material in the cavity.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A light emitting device package, comprising:
a body comprising a cavity at an upper portion;
first and second metal layers in the cavity of the body;
an open area recessed in the cavity and disposed between the first and second metal layers;
a first metal plate disposed in the open area and spaced apart from the first and second metal layers;
a semiconductor device disposed on the first metal plate and electrically connected to at least one of the first and the second metal layers;
a resin material in the cavity; and
a second metal plate disposed under a bottom surface of the body,
wherein the first metal plate is disposed between the body and the semiconductor device, and between the first and second metal layers,
wherein a first portion of the body is disposed between the first metal plate and the second metal plate, and
wherein the second metal plate has a horizontal width smaller than a horizontal width of the body and is vertically overlapped with the first and second metal layers disposed in the cavity.
2. The light emitting device package according to claim 1 , wherein the second metal plate is disposed at a region facing a bottom of the semiconductor device.
3. The light emitting device package according to claim 2 , wherein the second metal plate is disposed at the region facing the first metal plate which has the horizontal width small than a horizontal width of the open area.
4. The light emitting device package according to claim 3 , wherein the second metal plate is formed of a same material as that of the first and second metal layers.
5. The light emitting device package according to claim 2 , wherein the second metal plate has a size greater than that of the bottom of the semiconductor device.
6. The light emitting device package according to claim 3 , wherein the second metal plate is spaced apart from the first and second metal layers and has a thickness thicker than a thickness of the first metal plate.
7. The light emitting device package according to claim 1 , wherein the first metal plate is directly contacted with the semiconductor device and a bottom surface of the open area.
8. The light emitting device package according to claim 1 , wherein the open area includes a bottom surface lower than an upper surface of the first and second metal layers which are disposed in the cavity.
9. The light emitting device package according to claim 8 , wherein the first metal plate has an upper surface lower than the upper surface of the first and second metal layers which are disposed in the cavity.
10. The light emitting device package according to claim 1 , wherein the open area has a width smaller than that of the bottom surface of the cavity.
11. The light emitting device package according to claim 1 , wherein a portion of the resin material is disposed in the open area and is disposed around the first metal plate.
12. The light emitting device package according to claim 11 , wherein the resin material is physically contacted with a lateral surface of the first metal plate.
13. The light emitting device package according to claim 12 , wherein the resin material is physically contacted with a bottom surface of the open area.
14. The light emitting device package according to claim 1 , wherein the semiconductor device is embedded in the open area and is connected to the first and second metal layers by a wire.
15. The light emitting device package according to claim 3 , wherein the first metal plate has substantially the same width as the bottom of the semiconductor device.
16. The light emitting device package according to claim 1 , further comprising a third metal layer connected to the first metal layer and a fourth metal layer connected to the second metal layer,
wherein the third and fourth metal layers are disposed under the bottom surface of the body.
17. The light emitting device package according to claim 16 , wherein the second metal plate has a thickness thicker than a thickness of the third and fourth metal layers.
18. The light emitting device package according to claim 1 , wherein the second metal plate is disposed between the third metal layer and the fourth metal layer.
19. The light emitting device package according to claim 1 , wherein the first and second metal plates are electrically disconnected to the first and second metal layers, and
wherein the first metal plate has a thickness thinner than a thickness of the second metal plate.Cited by (0)
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