Organic light emitting display device and method of manufacturing the same

Abstract

An organic light emitting display device including: a substrate; an active layer formed on the substrate; a first insulation film disposed on the substrate to cover the active layer; a transistor including a gate electrode disposed at a location corresponding to the active layer with the first insulation film in between, and source and drain electrodes electrically connected to the active layer; a first electrode layer disposed on the substrate and electrically connected to any one of the source and drain electrodes of the transistor; a second electrode layer formed on the first electrode layer; an organic light emitting layer disposed between the first electrode layer and the second electrode layer; and a light reflecting unit covering a side and a part of top of the first electrode layer.

What is claimed is: 
     
       1. An organic light emitting display device, comprising:
 a substrate; 
 an active layer formed on the substrate; 
 a first insulation film disposed on the substrate to cover the active layer; 
 a transistor comprising a gate electrode disposed at a location corresponding to the active layer with the first insulation film in between, and source and drain electrodes electrically connected to the active layer; 
 a first electrode layer disposed on the substrate and electrically connected to any one of the source and drain electrodes of the transistor; 
 a second electrode layer formed on the first electrode layer; 
 an organic light emitting layer disposed between the first electrode layer and the second electrode layer; and 
 a light reflecting unit covering a side and a part of top of the first electrode layer, the light reflecting unit includes a first part contacting a side of the first electrode layer and a second part contacting a part of top of the first electrode layer. 
 
     
     
       2. The organic light emitting display device of  claim 1 , wherein the substrate comprises a groove formed towards a thickness direction of the substrate, and a part of the light reflecting unit fills the groove. 
     
     
       3. The organic light emitting display device of  claim 1 , wherein the substrate comprises a groove formed along an edge of a region corresponding to the first electrode layer, and a part of the light reflecting unit fills the groove. 
     
     
       4. The organic light emitting display device of  claim 1 , wherein the second part surrounds the organic light emitting layer. 
     
     
       5. The organic light emitting display device of  claim 1 , wherein a height of the first part is substantially equal to a thickness of the first electrode layer, and a height of the second part is larger than a thickness of the organic light emitting layer. 
     
     
       6. The organic light emitting display device of  claim 1 , wherein an inner width of the second part is equal to or larger than a width of the organic light emitting layer. 
     
     
       7. The organic light emitting display device of  claim 1 , wherein the first electrode layer and the gate electrode are disposed directly on the first insulation film. 
     
     
       8. The organic light emitting display device of  claim 1 , wherein the light reflecting unit comprises a metal material. 
     
     
       9. The organic light emitting display device of  claim 1 , wherein the light reflecting unit and the gate electrode comprise the same material. 
     
     
       10. The organic light emitting display device of  claim 1 , being a bottom emission type. 
     
     
       11. The organic light emitting display device of  claim 1 , further comprising a capacitor comprising a lower electrode formed on the same layer as the active layer, and an upper electrode formed on the same layer as the first electrode layer. 
     
     
       12. An organic light emitting display device comprising:
 a substrate; 
 a light transmissive first electrode layer disposed on the substrate; 
 a reflective second electrode layer formed on the light transmissive first electrode layer to face the light transmissive first electrode layer; 
 an organic light emitting layer disposed between the light transmissive first electrode layer and the reflective second electrode layer, and emitting light; 
 a transistor comprising a gate electrode, a source electrode, and a drain electrode; and 
 a light reflecting unit covering a side and a part of top of the light transmissive first electrode layer, the light reflecting unit includes a first part contacting and covering the side of the light transmissive first electrode layer and a second part contacting and covering the part of top of the light transmissive first electrode layer, an inner width of the second part is smaller than a width of the light transmissive first electrode layer and substantially equal to or smaller than a width of the organic light emitting layer. 
 
     
     
       13. The organic light emitting display device of  claim 12 , wherein the substrate comprises a groove formed in a thickness direction of the substrate, and a part of the light reflecting unit fills the groove. 
     
     
       14. The organic light emitting display device of  claim 13 , wherein the groove has a closed-curve surrounding the light transmissive first electrode layer. 
     
     
       15. A method of manufacturing an organic light emitting display device, the method comprising:
 preparing a substrate; 
 performing a first mask process wherein a semiconductor layer is formed on the substrate and then an active region is formed by patterning the semiconductor layer; 
 performing a second mask process wherein a first insulation film and a second conductive film are sequentially stacked and then a first electrode layer is formed by patterning the first conductive film; 
 performing a third mask process wherein a second conductive film is stacked on the first insulation film and then a reflective pattern and a gate electrode, which cover the first electrode layer, are formed by patterning the second conductive film; 
 doping a part of the active region by using the gate electrode as a mask; 
 performing a fourth mask process wherein a second insulation film is formed and then openings exposing a part of the reflective pattern and the doped part of the active region are formed; 
 performing a fifth mask process wherein a source electrode and a drain electrode, which are electrically connected to the doped part of the active region, are formed by forming and then patterning a third conductive film, and a light reflecting unit covering a side and a part of top of the first electrode layer is formed by patterning the part of the reflective pattern exposed through the openings formed during the performing of the fourth mask process; and 
 performing a sixth mask process wherein a pixel region is defined by stacking and the patterning a third insulation film. 
 
     
     
       16. The method of  claim 15 , wherein the preparing of the substrate comprises preparing a substrate comprising a groove extending in a thickness direction of the substrate along a region corresponding to the light reflecting unit. 
     
     
       17. The method of  claim 15 , wherein the performing of the first mask process further comprises forming a lower electrode of a capacitor by patterning the semiconductor layer, and
 the performing of the second mask process further comprises forming an upper electrode of the capacitor by patterning the first conductive film. 
 
     
     
       18. The method of  claim 15 , wherein the performing of the third mask process comprises forming a reflective pattern larger than the first electrode layer so as to cover a part of the first electrode layer and some region of the first insulation film around the first electrode layer. 
     
     
       19. The method of  claim 15 , wherein the performing of the fourth mask process comprises forming a first opening exposing a part of the reflective pattern by patterning the second insulation film and simultaneously forming second and third openings exposing a part of the active region by patterning the first and second insulation films. 
     
     
       20. The method of  claim 19 , wherein a size of the first opening is smaller than a size of the first electrode. 
     
     
       21. The method of  claim 15 , further comprising, after the performing of the sixth mask process, forming an organic light emitting layer on the first electrode layer, and a second electrode layer,
 wherein a height of the light reflecting unit covering the part of the top of the first electrode layer is larger than a thickness of the organic light emitting layer.