Semiconductor device

Abstract

A semiconductor device includes: a semiconductor substrate including a first semiconductor layer on the semiconductor substrate; multiple semiconductor elements in the semiconductor substrate; and an ineffective region. Each semiconductor element includes: a second semiconductor layer in a surface portion of the first semiconductor layer; a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced a part from the second semiconductor layer; and a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer. The ineffective region is disposed in the semiconductor substrate between at least two adjacent semiconductor elements; and does not provide a function of the semiconductor elements.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a semiconductor substrate including a first semiconductor layer, which has a first conductive type and is disposed on a principal surface of the semiconductor substrate; 
 a plurality of semiconductor elements disposed on at least the principal surface of the semiconductor substrate; and 
 an ineffective region, wherein: 
 each semiconductor element includes:
 a second semiconductor layer disposed in a surface portion of the first semiconductor layer; 
 a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced apart from the second semiconductor layer; and 
 a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer; 
 
 the ineffective region is disposed in the semiconductor substrate between at least adjacent two of the plurality of semiconductor elements; 
 the ineffective region does not provide a function of the semiconductor; 
 in each semiconductor element, the second semiconductor layer extends along a predetermined direction, which is perpendicular to a thickness direction of the semiconductor substrate; 
 in each semiconductor element, the third semiconductor layer extends along the predetermined direction, which is perpendicular to the thickness direction of the semiconductor substrate; 
 the ineffective region is disposed in a part of the semiconductor substrate, which extends along the predetermined direction; and 
 the part of the semiconductor substrate is disposed between one of the second and third semiconductor layers in one of the at least adjacent two of the plurality of semiconductor elements and one of the second and third semiconductor layers in the other of the at least adjacent two of the plurality of semiconductor elements. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein:
 the ineffective region includes an insulation film and a part of the first semiconductor layer; 
 the part of the first semiconductor layer is disposed under the insulation film; and 
 the ineffective region blocks a flow of a carrier therein. 
 
     
     
       3. A semiconductor device comprising:
 a semiconductor substrate including a first semiconductor layer, which has a first conductive type and is disposed on a principal surface of the semiconductor substrate; 
 a plurality of semiconductor elements disposed on at least the principal surface of the semiconductor substrate; and 
 an ineffective region, wherein: 
 each semiconductor element includes:
 a second semiconductor layer disposed in a surface portion of the first semiconductor layer; 
 a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced apart from the second semiconductor layer; and 
 a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer; 
 
 the ineffective region is disposed in the semiconductor substrate between at least adjacent two of the plurality of semiconductor elements; 
 the ineffective region does not provide a function of the semiconductor elements; 
 the second semiconductor layer provides a source; 
 the third semiconductor layer provides a drain; and 
 the control layer provides a gate. 
 
     
     
       4. A semiconductor device comprising:
 a semiconductor substrate including a first semiconductor layer, which has a first conductive type and is disposed on a principal surface of the semiconductor substrate; 
 a plurality of semiconductor elements disposed on at least the principal surface of the semiconductor substrate; and 
 an ineffective region, wherein: 
 each semiconductor element includes:
 a second semiconductor layer disposed in a surface portion of the first semiconductor layer; 
 a third semiconductor layer disposed in another surface portion of the first semiconductor layer and spaced apart from the second semiconductor layer; and 
 a control layer disposed on a portion of the first semiconductor layer between the second semiconductor layer and the third semiconductor layer; 
 
 wherein the ineffective region is disposed in the semiconductor substrate between at least two adjacent semiconductor elements of the plurality of semiconductor elements; 
 wherein the ineffective region does not provide a function of the semiconductor elements, 
 wherein the second semiconductor layer provides an emitter, 
 wherein the third semiconductor layer provides a collector, and 
 wherein the control layer provides a gate.