Organic light-emitting display apparatus and method of manufacturing the same

Abstract

An organic light-emitting display apparatus is provided. The organic light-emitting display apparatus includes: a pixel electrode for reflecting incident light and located on a substrate including a thin film transistor (TFT), and electrically connected to the TFT; an organic layer on the pixel electrode and including an emission layer; and an opposite electrode on the organic layer and including a resonant region for forming a resonant structure with the pixel electrode by reflecting light emitted from the emission layer, and a non-resonant region that is a region other than the resonant region.

What is claimed is: 
     
       1. An organic light-emitting display apparatus comprising:
 a pixel electrode for reflecting incident light and located on a substrate comprising a thin film transistor (TFT), and electrically connected to the TFT; 
 an organic layer on the pixel electrode and comprising an emission layer; and 
 an opposite electrode on the organic layer and comprising:
 a resonant region for forming a resonant structure with the pixel electrode by reflecting light emitted from the emission layer; and 
 a non-resonant region for transmitting the light emitted from the emission layer and not forming any resonant structure with respect to the light emitted from the emission layer. 
 
 
     
     
       2. The organic light-emitting display apparatus of  claim 1 , wherein a surface of the resonant region that faces the organic layer has an area that is substantially a same as that of a surface of the non-resonant region that faces the organic layer. 
     
     
       3. The organic light-emitting display apparatus of  claim 1 , wherein a surface of the resonant region that faces the organic layer has an area that is different from that of a surface of the non-resonant region that faces the organic layer. 
     
     
       4. The organic light-emitting display apparatus of  claim 1 , wherein the emission layer is configured to emit light having a wavelength corresponding to red light, green light, or blue light. 
     
     
       5. The organic light-emitting display apparatus of  claim 4 , wherein the organic layer further comprises at least one of a hole injection layer or a hole transport layer between the pixel electrode and the emission layer, or an electron injection layer or an electron transport layer between the emission layer and the opposite electrode. 
     
     
       6. The organic light-emitting display apparatus of  claim 1 , wherein
 the light emitted from the emission layer is output to the outside through the opposite electrode, 
 the resonant region comprises a semi-transparent layer, and 
 the non-resonant region comprises a transparent layer. 
 
     
     
       7. The organic light-emitting display apparatus of  claim 6 , wherein a distance between the pixel electrode and the semi-transparent layer included in the resonant region corresponds to a wavelength of the light emitted from the emission layer. 
     
     
       8. The organic light-emitting display apparatus of  claim 6 , wherein
 the transparent layer is shared by the resonant region and the non-resonant region, and 
 the semi-transparent layer is only in the resonant region. 
 
     
     
       9. The organic light-emitting display apparatus of  claim 6 , wherein the transparent layer comprises one or more selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). 
     
     
       10. The organic light-emitting display apparatus of  claim 6 , wherein the semi-transparent layer comprises a semi-transparent metal layer formed of one or more selected from the group consisting of Ag, Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg, and CaAg. 
     
     
       11. A method of manufacturing an organic light-emitting display apparatus, the method comprising:
 forming a pixel electrode on a substrate comprising a thin film transistor (TFT), the pixel electrode being configured to reflect incident light, and electrically connected to the TFT; 
 forming an organic layer comprising an emission layer on the pixel electrode; and 
 forming an opposite electrode comprising a resonant region and a non-resonant region on the organic layer, the resonant region being configured to form a resonant structure with the pixel electrode by reflecting light emitted from the emission layer, the non-resonant region being configured to transmit the light emitted from the emission layer and not form any resonant structure with respect to the light emitted from the emission layer. 
 
     
     
       12. The method of  claim 11 , wherein the forming of the opposite electrode comprises forming a surface of the resonant region that faces the organic layer to have an area that is substantially a same as that of a surface of the non-resonant region that faces the organic layer. 
     
     
       13. The method of  claim 11 , wherein the forming of the opposite electrode comprises forming a surface of the resonant region that faces the organic layer to have an area that is different from that of a surface of the non-resonant region that faces the organic layer. 
     
     
       14. The Method of  claim 11 , wherein the forming of the opposite electrode comprises:
 forming a semi-transparent layer in the resonant region; and 
 forming a transparent layer in the non-resonant region. 
 
     
     
       15. The method of  claim 14 , wherein the forming of the opposite electrode further comprises forming the transparent layer in the resonant region to cover the semi-transparent layer. 
     
     
       16. The method of  claim 14 , wherein the forming of the opposite electrode further comprises:
 forming the transparent layer in the resonant region; and 
 forming the semi-transparent layer on the transparent layer of the resonant region.