Simplified organic electronic device employing polymeric anode with high work function

Abstract

An electronic device employing a polymeric anode with high work function.

What is claimed is: 
     
       1. An electronic device employing a high-work-function and high-conductivity electrode that comprises a conductive material having a conductivity of 0.1 S/cm or more and a low-surface-energy material and has a first surface and a second surface opposite to the first surface, wherein the concentration of the low-surface-energy material in the second surface is greater than that of the low-surface-energy material of the first surface, and a work function of the second surface is 5.0 eV or more. 
     
     
       2. The electronic device of  claim 1 , wherein the concentration of the low-surface-energy material gradually increases in a direction from the first surface to the second surface. 
     
     
       3. The electronic device of  claim 1 , wherein the low-surface-energy material is a fluorinated material having at least one fluorine (F). 
     
     
       4. The electronic device of  claim 1 , wherein the low-surface-energy material is a fluorinated polymer having a repeating unit represented by one of Formulae 1 to 3 below: 
       
         
           
           
               
               
           
         
         wherein a is a number from 0 to 10,000,000; b is a number of 1 to 10,000,000; and 
         Q 1  is —[O—C(R 1 )(R 2 )—C(R 3 )(R 4 )] c —[OCF 2 CF 2 ] d —R 5 , —COOH, or —O—R f —R 6 , 
         wherein R 1 , R 2 , R 3  and R 4  are each independently —F, —CF 3 , —CHF 2  or —CH 2 F; 
         c and d are each independently a number from 0 to 20; 
         R f  is —(CF 2 ) 2 —, or —(CF 2 CF 2 O) z —CF 2 CF 2 —, wherein z is an integer from 1 to 50; and 
         R 5  and R 6  are each independently —SO 3 M, —PO 3 M 2 , or —CON, 
         wherein M is Na + , K + , Li + , H + , CH 3 (CH 2 ) w NH 3   + , NH 4   + , NH 2   + , NHSO 2 CF 3   + , CHO + , C 2 H 5 OH + , CH 3 OH + , or CH 3 (CH 2 ) w CHO + , wherein w is an integer from 0 to 50, 
       
       
         
           
           
               
               
           
         
         wherein Q 2  is a hydrogen atom, a substituted or unsubstituted C 5 -C 60  aryl group, or —COOH; 
         Q 3  is a hydrogen atom or a substituted or unsubstituted C 1 -C 20  alkyl group; 
         Q 4  is —O—(CF 2 ) r —SO 3 M, —O—(CF 2 ) r —PO 3 M 2 , —O—(CF 2 ) r —CO 2 M, or —CO—NH—(CH 2 ) s —(CF 2 ) t —CF 3 , 
         wherein r, s and t are each independently a number from 0 to 20; and 
         M is Na + , K + , Li + , H + , CH 3 (CH 2 ) w NH 3   + , NH 4   + , NH 2   + , NHSO 2 CF 3   + , CHO + , C 2 H 5 OH + , CH 3 OH + , or CH 3 (CH 2 ) w CHO + , wherein w is an integer from 0 to 50, 
       
       
         
           
           
               
               
           
         
         wherein 0≦m<10,000,000, and 0<n≦10,000,000; 
         x and y are each independently a number from 0 to 20; and 
         Y is —SO 3 M, —PO 3 M 2 , or —CO 2 M; 
         wherein M is Na + , K + , Li + , H + , CH 3 (CH 2 ) w NH 3   + , NH 4   + , NH 2   + , NHSO 2 CF 3   + , CHO + , C 2 H 5 OH + , CH 3 OH + , or CH 3 (CH 2 ) w CHO + , wherein w is an integer from 0 to 50. 
       
     
     
       5. The electronic device of  claim 1 , wherein the low-surface-energy material is a fluorinated oligomer represented by Formula 10 below:
   X-M f   n -M h   m -M a   r -(G) p   Formula 10
 
 wherein 
 X is a terminal group; 
 M f  is a unit derived from a fluorinated monomer prepared by condensation reaction of perfluoropolyether alcohol, polyisocyanate, and an isocyanate reactive-non-fluorinated monomer or a fluorinated C 1 -C 20  alkylene group; 
 M h  is a unit derived from a non-fluorinated monomer; 
 M a  is a unit having a silyl group represented by —Si(Y 4 )(Y 5 )(Y 6 ), 
 wherein, Y 4 , Y 5  and Y 6  are each independently a halogen atom, a substituted or unsubstituted C 1 -C 20  alkyl group, a substituted or unsubstituted C 6 -C 30  aryl group, or a hydrolysable substituent, wherein at least one of the Y 4 , Y 5  and Y 6  is a hydrolysable substituent, 
 G is a monovalent organic group including a chain transfer agent; 
 n is a number from 1 to 100, 
 m is a number from 0 to 100, 
 r is a number from 0 to 100; 
 wherein n+m+r≧2, and 
 p is a number from 0 to 10. 
 
     
     
       6. The electronic device of  claim 1 , wherein the conductive material comprises polythiophene, polyaniline, polypyrrole, polystyrene, sulfonated polystyrene, poly(3,4-ethylenedioxythiophene), self-doped conductive polymer, any derivative thereof, or any combination thereof. 
     
     
       7. The electronic device of  claim 1 , wherein the high-work-function and high-conductivity electrode further comprises at least one of a metal nanowire, a semiconductor nanowire, a metal nanodot, carbon nanotube, graphene, reduced graphene oxide, and graphite. 
     
     
       8. The electronic device of  claim 7 , wherein at least one moiety represented by —S(Z 100 ) or —Si(Z 101 )(Z 102 )(Z 103 ) is attached to the surface of the metal nanowire, the semiconductor nanowire, and the metal nanodot, wherein Z 100 , Z 101 , Z 102 , and Z 103  are each independently a hydrogen atom, a halogen atom, a substituted or unsubstituted C 1 -C 20  alkyl group, or a substituted or unsubstituted C 1 -C 20  alkoxy group. 
     
     
       9. The electronic device of  claim 1 , wherein the high-work-function and high-conductivity electrode is prepared by using a composition for forming an electrode comprising the conductive material, the low-surface-energy material, and a solvent, wherein the solvent comprises at least one polar organic solvent selected from the group consisting of ethylene glycol, glycerol, dimethylformamide (DMF), and dimethylsulfoxide (DMSO). 
     
     
       10. The electronic device of  claim 1 , wherein a work function of the second surface is in the range of 5.0 eV to 6.5 eV. 
     
     
       11. The electronic device of  claim 1 , wherein the electronic device comprises an organic light-emitting device, an organic solar cell, an organic memory device, or an organic thin film transistor (TFT). 
     
     
       12. The electronic device of  claim 1 , wherein the electronic device is an organic light-emitting device that comprises: an anode; a cathode; and an emission layer interposed between the anode and cathode and having an ionization potential greater than a work function of indium tin oxide, by 0.3 eV or more,
 the high-work-function and high-conductivity electrode is the anode of the organic light-emitting device, and 
 the second surface of the high-work-function and high-conductivity electrode faces the emission layer. 
 
     
     
       13. The electronic device of  claim 12 , wherein the second surface of the high-work-function and high-conductivity electrode contacts the emission layer. 
     
     
       14. The electronic device of  claim 12 , wherein a hole transport layer (HTL) is interposed between the high-work-function and high-conductivity electrode and the emission layer, and the second surface of the high-work-function and high-conductivity electrode contacts the HTL. 
     
     
       15. The electronic device of  claim 1 , wherein the electronic device is an organic solar cell that comprises: an anode; a cathode; and a photoactive layer interposed between the anode and the cathode and having an ionization potential greater than a work function of indium tin oxide, by 0.3 eV or more,
 the high-work-function and high-conductivity electrode is the anode of the organic solar cell, and 
 the second surface of the high-work-function and high-conductivity electrode faces the photoactive layer. 
 
     
     
       16. The electronic device of  claim 15 , wherein the second surface of the high-work-function and high-conductivity electrode contacts the photoactive layer.