Mask for exposure and method of fabricating substrate using said mask

Abstract

Provided is a photolithography mask capable of forming fine patterns beyond a critical resolution of an exposer without replacing or changing the exposer. The mask includes an at least partially light absorbing phase shift layer and uses a complex wavelength light source.

What is claimed is: 
     
       1. A mask for use with light emitted from an exposer having a complex wavelength light source and directed at a worked target, the mask comprising:
 a substrate; and 
 an at least partially light absorbing phase shift layer formed on one side of the substrate, 
 wherein the at least partially light absorbing phase shift layer is configured to impart a phase shift of about 110 degrees to about 250 degrees to incident light having wavelengths of about 435 nm, about 405 nm, and about 365 nm. 
 
     
     
       2. The mask for exposure of  claim 1 , wherein:
 the at least partially light absorbing phase shift layer includes an absorbing phase shift material. 
 
     
     
       3. The mask for exposure of  claim 2 , wherein:
 the absorbing phase shift material is molybdenum silicide. 
 
     
     
       4. The mask for exposure of  claim 2 , wherein:
 a transmittance of the at least partially light absorbing phase shift layer is more than about 0% and less than about 30%. 
 
     
     
       5. The mask for exposure of  claim 2 , wherein:
 the mask is further configured to impart a pitch of a pattern formed at the worked target, the pitch being about 2.5 μm to about 6 μm. 
 
     
     
       6. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 6 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 2%, a phase shift provided by the at least partially light absorbing phase shift layer is from about 140 degrees to about 220 degrees. 
 
     
     
       7. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 6 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 4%, a phase shift provided by the at least partially light absorbing phase shift layer is about 180 degrees. 
 
     
     
       8. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 5 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 2%, a phase shift provided by the at least partially light absorbing phase shift layer is about 120 degrees to about 240 degrees. 
 
     
     
       9. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 5 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 4% to about 6%, a phase shift provided by the at least partially light absorbing phase shift layer is about 140 degrees to about 220 degrees. 
 
     
     
       10. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 5 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 8% to about 10%, a phase shift provided by the at least partially light absorbing phase shift layer is about 160 degrees to about 200 degrees. 
 
     
     
       11. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 5 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 12%, a phase shift provided by the at least partially light absorbing phase shift layer is about 180 degrees. 
 
     
     
       12. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 4 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 2% to about 6%, a phase shift provided by the at least partially light absorbing phase shift layer is about 120 degrees to about 240 degrees. 
 
     
     
       13. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 4 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 8% to about 16%, a phase shift provided by the at least partially light absorbing phase shift layer is about 140 degrees to about 220 degrees. 
 
     
     
       14. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 4 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 18% to about 26%, a phase shift provided by the at least partially light absorbing phase shift layer is about 160 degrees to about 200 degrees. 
 
     
     
       15. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 4 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 28%, a phase shift provided by the at least partially light absorbing phase shift layer is about 180 degrees. 
 
     
     
       16. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 3 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 2% to about 14%, a phase shift provided by the at least partially light absorbing phase shift layer is about 120 degrees to about 240 degrees. 
 
     
     
       17. The mask for exposure of  claim 5 , wherein:
 when the pitch of the pattern formed at the worked target is about 3 μm and 
 a transmittance of the at least partially light absorbing phase shift layer is about 16% to about 30%, a phase shift provided by the at least partially light absorbing phase shift layer is about 140 degrees to about 220 degrees. 
 
     
     
       18. A method of manufacturing a substrate using a mask, the method comprising:
 positioning a mask between a substrate and an exposer, wherein the substrate includes a photoresist and the exposer includes a complex wavelength light source; 
 directing a light upon the mask so as to transmit a portion of the light through the mask and onto the photoresist of the substrate; and 
 developing the photoresist, 
 wherein the mask comprises:
 a substrate; and 
 an at least partially light absorbing phase shift layer formed on one side of the substrate, 
 
 wherein the light transmitted through the at least partially light absorbing phase shift layer has wavelengths of about 435 nm, about 405 nm, and about 365 nm and has imparted thereto a phase shift of about 110 degrees to about 250 degrees. 
 
     
     
       19. The manufacturing method of  claim 18 , wherein:
 the at least partially light absorbing phase shift layer comprises a phase shift material, and 
 the phase shift material is molybdenum silicide.