US9011653B2ActiveUtilityA1

Sputtering target

82
Assignee: IKEDA MAKOTOPriority: Nov 29, 2010Filed: Nov 28, 2011Granted: Apr 21, 2015
Est. expiryNov 29, 2030(~4.4 yrs left)· nominal 20-yr term from priority
Inventors:Makoto Ikeda
C23C 14/3414C22C 33/0278H01F 41/183B22F 3/105B22F 2998/10B22F 1/0003G11B 5/851C22C 1/1084B22F 3/15
82
PatentIndex Score
2
Cited by
19
References
4
Claims

Abstract

Provided is a sputtering target characterized by containing Ag and C. The sputtering target contains Ag in addition to Fe, Pt and C. By allowing the sputtering target to contain Ag, the sputtering target has high density. As a result, when the sputtering target is placed in a vacuum atmosphere in the sputtering process, the amount of a gas emitted from the sputtering target can be reduced, and the properties of a thin film formed by sputtering can be improved. Moreover, even when the sputtering target is produced by low-temperature sintering, it has high density.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A sputtering target containing Fe, Pt, Ag and C, wherein the composition of the sputtering target is represented by [(Fe x Pt 100-x ) 100-y —Ag y ] 100-z —C z  (x, y, z: % by mol), wherein x is 45 to 65, y is 1 to 20, and z is 13 to 59. 
     
     
       2. The sputtering target as claimed in  claim 1 , which is produced by calcining a raw material powder containing Fe powder, Pt powder, Ag powder and C powder. 
     
     
       3. The sputtering target as claimed in  claim 1 , which has a density of not less than 90%. 
     
     
       4. The sputtering target as claimed in  claim 2 , which has a density of not less than 90%.

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